Summary and Status

The potential uses of accurate and efficient CMP models are numerous. To date, however, CMP models have been effectively used only in a subset of the possibilities. 

It is now possible to model the wafer-level performance for most CMP processes. These models cover only some of the important tool or process design issues, such as relative velocities and pressure dependencies additional work is needed to predict the results for other parameters such as slurry composition or particle size, temperature dependencies, pad properties, and other effects. Die-level modeling has been used effectively to identify 

As understanding of the CMP process improves, one can expect a great deal of work in all aspects of CMP modeling and simulation. These improvements are likely to extend over many length scales spanning wafer-level polish and uniformity concerns to die-level prediction to microscopic feature, chemical, and mechanical interactions. 

The Origin of Edge EITect in Chemical Mechanical Planarization, Proceedings of Electro. Chem. Soc. Meeting, vol. 96, no. 22, p. 228, 1996. 

Boning, D. Ouma, and J. Chung, Extraction of Planarization Length and Response Function in Chemical-Mechanical Polishing, Materials Research Society 1998 Spring Meeting, San Francisco, CA, May 1998. 

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Porzel, F., Petes, J., Tondo, D., Smith, C., Freund, D., and Swisdak, M., Naval Explosives Safety Improvement Program (NESIP) Summary and Status through 30 June 1976, NSWC TR 81-27, Mar 1981. 

Bill Summary and Status for the 102d Congress HR556, Public Law 102-4 (02/06/91). http //thomas.loc.gOv/cgi-bin/bdquery/DPdl02 l. 

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