Stress-voltage curve

Fig. 3. Stress-voltage curve for UPD of silver onto a gold (111) coated cantilever.

Table V collects the dimer yields that represent the essential quantity of the preparative data of anodic styrene oxidation. The table also contains the adsorption equilibrium coefficients AT" for styrene obtained by evaluating current voltage curves. Again, the particular physisorptive properties of graphitic carbon for unsaturated molecules are stressed by the data of Table V.

There is some hysteresis associated with the electrocapillary curves. This is shown in the difference between the pzc values for cathodic and anodic scan directions (scanning to more negative and positive values respectively). This has been observed in other stress-voltage measurements. This hysteresis shows some scan rate dependence and is reduced at lower scan rates, suggesting that some kinetic factor may be involved. 

FIGURE 20.36 Current density-voltage curves of unalloyed steels in alkaline solution and position of stress corrosion cracking. 

Secondly, reference was made to the effects of increasing the temperature of the electrolysis of water. Whilst the thermodynamic gains might be modest, there were significant improvements in the kinetic performance. Finally Professor Nurnberg referred to the current-voltage curves cited in the paper. He stressed that the performance of the ambient temperature alkaline cells developed at Julich was already considerably imposed. 

Fig. 5.4 Voltage-time curve for a p-type silicon electrode anodized galvanostatically at 0.1 mA cm"2 in 10% acetic acid. Silicon electrodes were removed from the electrolyte after various anodization times (filled circles) and the thickness of the anodic oxide was measured by ellipsometry (open circles). The curvature of the sample was monitored in situ and is plotted as the value of stress times oxide thickness (filled triangles). The bar graph below the V(t) curve shows a proposed formation mechanism. Galvanostatically a...

Fig. 3. Gate voltage dependence of the frequency ujq of the fundamental mode for three different values of the residual stress. Numbers are taken for the E-nanotube (see Fig. 2). The fundamental mode of an unstressed tube is 140 MHz (thin horizontal line). The inset is an enlargement of the To = 0 curve of the main figure showing step-wise increases of vn whenever an additional electron tunnels onto the tube.

As typical parameter the voltage shift of a hysteresis loop is recorded over time under various stress conditions. Voltage shift means a change in Vc+ and Vc-, the curve is not symmetrical any more. Vc>ahift is defined as followed ... 

A series of small stresses were applied to a 0.03 M sample with an equilibrium 4-value of 183 A, reducing the 4-value to 143 A over a period of about four hours. A larger stress was then applied, and the gel was allowed to come to equilibrium with the applied stress for 15 hours. The 4-value is plotted as a function of time in Figure 3.2. After 2 hours the 4-value was 118 A, and after 15 hours when the curve has obviously flattened out, the 4-value was 115 A. In the available neutron beam time, it was not possible to allow the gel to come fully to equilibrium with each applied stress. An equilibration time of two hours was chosen. After this time the voltage was always steady to two significant figures, and we may surmise that the error of approximately 3 A introduced into the 4-spacing is an absolute one, which does not affect the shape of the measured force-distance curve. 

Numbers in the columns refer to corresponding numbered curves in the Stress Spider ViN simply means any input voltage is appropriate ViN 50 is input voltage at which D = 0.5 ... 

The AC rapid rise test was performed at 0.5 kV per second stress rate on similarly treated sanqples, and resulted in a decrease from 32 to 8 kV breakdown voltage for XLPE with tree penetration progressing from 0 to 100% of the insulation (Figure 22). Comparably shaped curves represent the performance of XLPE in... 

Shear Stress Sensors, Fig. 4 Schematic of (a) MEMS skin friction fence and (b) its calibration curve between the bridge voltage (17b) and the shear stress (tw)... 

In this section we consider several of these photoemissive device specifications, stressing dark current, the choice of the electron-multiplier dynode material, and the design of the multiplier for optimization of speed or gain. Other device specifications, such as dynode operating voltages, ruggedness and physical size, are best found in the commercial literature [5.2,3, and, e.g., 5.135-138]. We conclude the chapter with a comparison of spectral response curves for classical and NEA devices. 

Before clarifying generating stress, look at Figure 4.4. Convergent state of step voltage response is shown. Voltage under 5[V], a strip bended slowly and stopped at the balanced state, in which the surface curve was uniform. Voltage over 5[V], a strip became perpendicular state and stopped with small oscillation, which was a limit, in which the surface curve was not uniform. 

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