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Space charge layer width

Where, LD and Lsc are Debye length and the space charge layer width, respectively. / , e, and T are the Boltzmann constant elementary charge, and temperature, respectively. jLd and Lsc are given by... [Pg.223]

Space charge layer width -Variation in pore diameter J... [Pg.39]

Fig. 4. Band bending in a thin film on a metal substrate where the calculated value of the space-charge layer width, IF, exceeds the film thickness, Lt, so that excess charge appears on the metal. In this situation, the field assists the separation of photoexcited carriers throughout the entire film. Fig. 4. Band bending in a thin film on a metal substrate where the calculated value of the space-charge layer width, IF, exceeds the film thickness, Lt, so that excess charge appears on the metal. In this situation, the field assists the separation of photoexcited carriers throughout the entire film.
Fig. 3.18 Mott-Schottky plots of Si-doped (curves a-c) and undoped (curve d) mesoporous hematite photoanode. The capacitances for curves a, b, and c are obtained from an Si-doped sample and models a, b, and c, respectively, shown in the inset of the left-hand plot. Curve d is obtained from the undoped film and model a (series RC). The dashed lines connecting the data points represent the variable active surface area fit. Sketches e-g depict the development of the space-charge layer in a mesoporous semiconductor as function of applied potential, illustrating a decrease in active surface area at advancing space-charge layer width in two dimensions, (e) Near flat band potential with maximum surface area, (f) Total depletion of smaller feature at increased bias potential, (g) Decreased active surface area in concave curved surface. Reprinted with permission from ref. [57], copyright, 2009 American Chemical Society... Fig. 3.18 Mott-Schottky plots of Si-doped (curves a-c) and undoped (curve d) mesoporous hematite photoanode. The capacitances for curves a, b, and c are obtained from an Si-doped sample and models a, b, and c, respectively, shown in the inset of the left-hand plot. Curve d is obtained from the undoped film and model a (series RC). The dashed lines connecting the data points represent the variable active surface area fit. Sketches e-g depict the development of the space-charge layer in a mesoporous semiconductor as function of applied potential, illustrating a decrease in active surface area at advancing space-charge layer width in two dimensions, (e) Near flat band potential with maximum surface area, (f) Total depletion of smaller feature at increased bias potential, (g) Decreased active surface area in concave curved surface. Reprinted with permission from ref. [57], copyright, 2009 American Chemical Society...
Fig. 9.2 Calculated transit times, Zt, for the movement of an electron or hole across the space charge layer as a function of ionized impurity level concentration, N, and mobility, /x. Lightidark gray indicates regions of smallAarge polaron transport. The space charge layer width is calculated from (9.2) for s = 100, Fb = 0.25 V with the assumption that Ni= N... Fig. 9.2 Calculated transit times, Zt, for the movement of an electron or hole across the space charge layer as a function of ionized impurity level concentration, N, and mobility, /x. Lightidark gray indicates regions of smallAarge polaron transport. The space charge layer width is calculated from (9.2) for s = 100, Fb = 0.25 V with the assumption that Ni= N...
The space-charge layer width IF of an abrupt p-n junction is given in general by [4.10]... [Pg.115]

M. Vollman, R. Waser Grain Boundary Defect Chemistry of Acceptor-Doped Titanates Space Charge Layer Width J Am.Ceram.Soc. 77[1] 235-43 (1994)... [Pg.86]


See other pages where Space charge layer width is mentioned: [Pg.462]    [Pg.444]    [Pg.187]    [Pg.256]    [Pg.362]    [Pg.33]    [Pg.339]    [Pg.42]    [Pg.421]    [Pg.432]    [Pg.47]    [Pg.39]    [Pg.44]    [Pg.148]    [Pg.149]    [Pg.296]    [Pg.296]    [Pg.297]    [Pg.297]    [Pg.298]    [Pg.298]    [Pg.303]    [Pg.112]    [Pg.1898]    [Pg.102]    [Pg.112]    [Pg.659]    [Pg.44]   
See also in sourсe #XX -- [ Pg.297 ]




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