Some Possible Applications of a-Si H FETs

As mentioned earlier, probably the most promising application of a-Si H FETs is their use in addressable liquid crystal displays, which will be discussed in the following Chapter. Here we shall review the results of some exploratory experiments on the application of the FETs to a number of logic and image-sensing circuits. 

The inverter circuit described in recent publications by Nara and Matsumura (1982) is shown in Fig. 17. It consists of an n-channel enhancement mode driver FET and a p-channel load FET produced by a hot-cathode arc-discharge decomposition of silane gas mixtures (Matsumura and 

The dashed curve in Fig. 20 shows the transfer characteristics of such a device having a load of approximately 30 and measured with a supply potential of 15 V. The inverter logic is clearly seen the output changes from about 14.5 to 2 V as the input swings from about 5 to 15 V. The full line in 

All the circuits mentioned in this section are slow by crystalline standards, although it must be emphasized that these exploratory a-Si H circuits were in no way optimized for speed of response. The limitations are briefly discussed in Part X. 

In this section we review the work of Matsumura et al. (1980) and our results (Snell et al., 1981b LeComber et al, 1981) on a-Si H image sensors. The circuit used initially by both groups was that originally suggested by 

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