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Slurry removal

After the silica flour or soil mixture has set, add a layer of silica sand as a filter pack, then fill the remainder of the borehole with bentonite or a grout seal (Figure 5). Access lines may be run from the lysimeter reservoir through a protective PVC riser pipe to the land surface. A locking protective casing should be used to secure the abovegrade lysimeter components. If the lysimeter is used immediately after installation, it is necessary to purge any water used to prepare the siiica flour or soil slurry. Remove at least the water volume equivalent to approximately one third of that used to make slurry. [Pg.814]

After the polymerization step, the reaction mixture is fed to a heated separation tank where the unreacted propylene is flashed off and recycled. The polymer slurry is then washed with alcohol to deactivate and remove the catalyst and the atactic polymer (the bad stuff.) Centrifuging the slurry removes the diluent from the isotactic PP (the good stuff.) The product is washed with acetone, dried, and stabilized with suitable additives. It is sold as a powder or can be pelletized into granules. [Pg.347]

Ice Crystal Growth. In order to quantify these results for the production of large disc and spherical crystals, seversd batch experiments on 6% lactose solutions were undertaken. The experimental conditions and results are shown in Table II. In these experiments, nuclei were generated at -2.5 C (except for Run Sa at -4.0°C) and input to the batch crystallizer controlled at various refirigerant temperatures. As these crystals grew, the total crystal surface area was controlled manually in order to maintain a heat balance for a constant value of the refrigerant temperature. Slurry removal rate for these experiments... [Pg.322]

A development reported by Zhao et al. combines mechanical brush scrubbing with in situ oxide underetching mechanism in a single tool [19]. The HF diluted at 0.5 to 1% injected in the second brush of the scrubber optimizes slurry removal. [Pg.203]

Fig. 18. PECVD TEOS oxide slurry removal efficiency in ammonia-based chemistries (0.25, 6) performed at 55°C during 10 min. Diluted ammonia with megasonics gives results as good as the scrubber. Fig. 18. PECVD TEOS oxide slurry removal efficiency in ammonia-based chemistries (0.25, 6) performed at 55°C during 10 min. Diluted ammonia with megasonics gives results as good as the scrubber.
Fig. 19. Alumina slurry removal elficiency in HF mixtures on PECVD TEOS oxide. Behavioral differences between alumina particles and slurries and efficiency of a specific HF- compatible very-high-power megasonics tank. (Direct Coupling system from SubMicron Inc.)... Fig. 19. Alumina slurry removal elficiency in HF mixtures on PECVD TEOS oxide. Behavioral differences between alumina particles and slurries and efficiency of a specific HF- compatible very-high-power megasonics tank. (Direct Coupling system from SubMicron Inc.)...
FIG. 3 Preparation of TLC plates by dipping. The two microscope slides are grasped at one end, dipped into the silica gel slurry, removed and separated, and dried and activated by heating. [Pg.121]

WO3 is a surface oxide that prevents further oxidation and dissolution of the underlying W by the slurry once it is formed. In the high surface areas where the pad contacts the surface, mechanical abrasion of the abrasive in the slurry removes the surface layer and exposes W, while in the low area where the pad does not contact the surface (and abrasion does not exist with no pad to wafer contact), the W film remains intact due to the presence of the oxide layer. Once both the high- and the low-surface areas of the wafer are planarized and are fully in contact with the pad, mechanical abrasion of the underlying film takes place. [Pg.435]

The water discharge is determined by its losses on transpiration and with deleted slurry. At slurry removal by mechanical scraper carriers or manually the water discharge minimum also makes only 2-5 g on 1 air. At periodic drain of the condensed... [Pg.241]


See other pages where Slurry removal is mentioned: [Pg.446]    [Pg.83]    [Pg.323]    [Pg.325]    [Pg.183]    [Pg.193]    [Pg.204]    [Pg.205]    [Pg.84]    [Pg.11]    [Pg.137]    [Pg.17]    [Pg.760]    [Pg.746]    [Pg.747]    [Pg.760]    [Pg.251]    [Pg.786]    [Pg.1002]    [Pg.446]    [Pg.347]    [Pg.83]   


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