SiNW FET sensors

Figure 5.8 Illustration of how the buffer electrolyte concentration affects the sensitivity of a p-doped SiNW FET sensor, when sensing a negatively charged analyte molecule, (a) At high ionic concentration, most of the charge carried by the capture analyte is screened by the ions, and therefore does not affect the...

Using SiNWs fabricated by various methods, resistive gas sensors (Gao et al. 2010 Field et al. 2011), FET (McAlpine et al. 2007 Paska et al. 2011), Schottky type gas sensors (Skucha et al. 2010), and field-ionized gas sensors (Sadeghian and Islam 2011) have been designed. Examples of such devices... 

A large number of biosensors are based on modified versions of field-effect transistors (FETs), and in combination with silicon nanowires (SiNWs) they form versatile, label-free sensors that have been used for the detection of proteins, single viruses, and DNA [6-11]. 

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