Hall effect single crystal

Soule D. Magnetic field dependence of the hall effect and magnetoresistance in graphite single crystals. Physical Review. 1958 112(3) 698-707. 

Wang, Z., Brawner, D., Chien, T., Ong, N., Tarascon, J., and Wang, E., Temperature Dependent Hall Effect in Nd2 xCex-Cu04 and "60 K" YBa2Cu3Oy Single Crystals, International M2S-HTSC Conference, Stanford, CA, 3-28 July 1989, to be published Physica C. 

Hahn (24) has studied large impure single crystals, and from Hall effect and conductivity data has found the electron mobility at room temperature to be about 85 cm.Vvolt-sec., with values deviating by about 20 percent from this one for some samples. 

Wurtzite-structure ZnO thin films grown by a variety of deposition techniques, as well as commercially available single crystal bulk samples are discussed. Furthermore, data for ZnO thin films intermixed with numerous elements are reviewed. Most of the results are obtained by SE, which is a precise and reliable tool for measurements of the DFs. The SE results are supplemented by Raman scattering and electrical Hall-effect measurement data, as well as data reported in the literature by similar or alternative techniques (reflection, transmission, and luminescence excitation spectroscopy). 

Table 7.5. Energetic positions below the conduction band edge (Ec) and densities of shallow (Hi, Alzn) and deep (I ll -E5) donor-like defect levels (traps) in ZnO identified by temperature-dependent Hall effect and deep level transient spectroscopy, respectively, in undoped PLD films and single crystals grown by seeded chemical vapor deposition (Eagle Picher), taken from H. von Wenckstern [57]...

Hall effect measurements are reported for three single crystals of the charge transfer salt HMTSF-TCNQ in the temperature range 1.4-200 K at ambient pressure and under hydrostatic pressures of approximately 6 Kbars. There is evidence that the high conductivity of this material at low temperatures arises from a small number of electrons with a high mobility and a low degeneracy temperature as suggested by other experiments and a recent band-structure calculation. 

The high quality of rubrene crystals has allowed detailed measurements of the transport characteristics, including the recent observation of the Hall effect [26]. Charge transport in rubrene single crystals, while trap-limited at low temperature, appears to occur via delocalized states over the 150-300 K temperature range with an (anisotropic) hole mobility of up to 20 cm /V s at room temperature [27,28]. 

Polarity of the HALL effect allows the determination of the type of current carriers If essentially simple for single crystal semiconductor samples, HALL coefficient determination for catalytic (i e. mostly powdered) materials requires the greatest care It has been claimed ( 6) ( 7) that it is relatively unaltered by contacts between grains and other hererogeneities in the solid ... 

Measurements of the magnetization, magnetoresistance and Hall effect have been carried out on the TbNiSn and DyNiSn single crystals under a magnetic field up to 8 T at 1.4 K by Furusawa et al. (1995). A multistep magnetization process was observed. The magnetoresistance in both compounds shows a complicated variation under magnetic field which is associated with spin fluctuations. 

Hall effect measurements have been performed on a PuSb single crystal by Therond (1986). The temperature variation of p is given in fig. 110. In the paramagnetic phase analysis yields a very low and positive (= 10 pf2cm/T). Since the... 

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