SIM procedures

All of the cleans to be discussed were evaluated for metal ion contamination by using the SIMS procedure previously described by Phillips, et al (J ). Particle contamination was determined using a Tencor Surfscan set at maximum sensitivity (lym) with an edge exclusion setting of 7- All of the samples were prepared and cleaned as previously described (19) unless stated otherwise. 

MS detection may well prove to be the most informative of all detectors for HPLC as not only does it afford quantitative analysis, but SIM procedures offer high sensitivity and selectivity and in principle it is a universal detector and can be used for all analytes. The power and utility of this approach has been extended further by the development of LC-MS-MS systems and these and other of the hyphenated techniques are discussed in detail in Chapter 7. 

Gilmore, I.S., Seah, M.P. (2000) Static SIMS towards unfragmented mass spectra—the G-SIMS procedure. Appl. Surf. Sci.,161,465-480. 

Many attempts were made historically to solve the problems of interferences affecting rare earth element (REE) ion signals [10,11]. Spectral stripping or deconvolution of the mass spectrum, combined with moderate energy filtering, have been so far the most common SIMS procedure for REE analysis in geological materials (e.g.. References [12,13]). In recent years at CNR-... 

IMPROVEMENTS OF SIMS PROCEDURES FOR LIGHT AND VOLATILE ELEMENTS... 

SIMS PROCEDURES EOR THE STUDY OF LIGHT ELEMENTS IN MICAS... 

Ottolini, L., Camara, F, Devouard, B. (2004) New SIMS procedures for the characterization of a complex silicate matrix, Na3(REE,Th,Ca,U)Sicomparison with EMPA and SREF results. Microchim. Acta, 145,139-146. 

The subcommittee has focused initially on developing documentary standards for dynamic SIMS, specifically sputter depth profiling and the analysis of silicon-based materials. Although the title of the subcommittee suggests that it will only develop standards applicable to SIMS, procedures for sputtered neutral mass spectrometry (SNMS) and fa.st atom bombardment mass spectrometry (FABMS) will also be developed. 

C. The first creep exposure of the SIM procedure is a conventional creep test in the sense that the creep test specimen does not have a history of creep loading. However, the second and subsequent creep exposures are complicated by having thermal histories of the previous steps this complexity defines the SIM procedure. The strain results of a conceptual SIM test performed at 40% of ultimate tensile strength are plotted as a creep diagram in Fig. 9.13(a). 

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