Silicones leakage current measurements

Lithium-drifted silicon x-ray detectors designed to measure trace amounts of plutonium in soil samples have been fabricated by Walton et al. (1984). These diodes have been passivated with sputtered a-Si H, with a resulting lowering of leakage current at the operating low temperatures. 

Fig. 6. Test set-up for evaluation of the electrical behavior of droplet layers on silicone rubber samples (left) and examples of measured leakage currents (right).

For the measurements of the ferroelectric hysteresis of P(VDF-TrFE) via the flatband shift, we used capacitors with oxidised p-type (-lO cm ) silicon substrate (100-235 nm Si02) to prevent large amoimts of leakage current. The copolymer film was prepared as described above. We used films of thickness fiom 100 nm to 1 pm. The structiues were prepared in top electrode geometry , with thermal evaporated aluminium, patterned via a shadow mask. The measiuements of capacitance versus voltage (CV) were carried out with an Agilent 4284A LCR meter at a frequency of 1 MHz with sweep rates fiom... 

Figure IX.F.2 Measured energy spectrum of minimum ionizing p-partcles using the setup shown in figure X.l and a prototype silicon detector. This particular detector had an extremely high leakage current which limited the measured energy resolution to about 65keV.

FIGURE 4,3.3 An example of the cross-section of a piezoresistive cantiiever. It is important to cover the piezoresistor with a passivation layer, such as silicon nitride, to prevent leakage of current, especially in the case of measurements in a liquid environment. Reprinted from Ref. [24], with permission from Elsevier B.V. 

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