Silicon formation

A. Valance. Porous silicon formation Stability analysis of the silicon-electrolyte interface. Phys Rev B 52 8323, 1995. 

Phase diagrams for the systems silver/copper (limited solubility in the solid) and aluminum/silicon (formation of an eutectic mixture)... 

Similar hydrogen-acceptor pairing effects are observed. An explanation of the observed neutralization of acceptors in Si. B has been proposed by Pantelides (1987), assuming that hydrogen acts as a deep compensating donor in p-type silicon. Formation of hydrogen-acceptor pairs would follow compensation as a result of the coulombic attraction between... 

If the wafer is not fixed in the cell, a mechanical wafer support is advisable. The ohmic contact can be an integral part of such a sample fixture, as shown in Fig. 1.5 a. During formation of mesoporous silicon on highly doped substrates at low bias (0-1.5 V), it was found that such a contact can even be immersed into the electrolyte without a significant degradation of its electrical properties. It is remarkable that mesoporous silicon formation takes place under the contact, too, without significant degradation of the contact properties. 

An extension of this QC model, including tunneling probabilities between the confined crystallites and the bulk, has been developed [Fr6]. The QC model for microporous silicon formation, however, is still qualitative in character, and a quantitative correlation between anodization parameters and the morphology and properties of the porous structure is at yet beyond the capability of the model. 

A. Splinter, O. Bartels, and W. Benecke. Thick porous silicon formation using implanted mask technology . Sensors and Actuators B76 (2001), 354-360. 

In CVD a surface is heated in a gas that decomposes to form a film. At low pressures the reactor behaves as a CSTR because gaseous diffusion is fast enough to maintain a uniform composition throughout the reactor. For silicon formation from silane the reaction... 

I. Ronga, A. Bsiesy, F. Gaspard, F. Herino, M. Ligeon, and F. Muller, Electrical characterization of the silicon-electrolyte interface in the conditions of porous silicon formation, J. Electrochem. Soc. 138, 1403, 1991. 

V. Labunov, I. Baranov, and V. Bondarenko, Investigation of porous silicon formation during anodic treatment in aqueous HE, Thin Solid Films 64, 479, 1979. 

A. V. Rao, F. Ozanam, and J. N. Chazalviel, In situ fourier-transform electromodulated infrared study of porous silicon formation Evidence for solvent effects on the vibrational linewidths, J. Electrochem. Soc. 138 153, 1991. 

C. M. A. Ashruf, P. J. French, P. M. M. C. Bressers, and J. J. Kelly, Galvanic porous silicon formation without external contacts, Censors ActHators A74, 118, 1999. 

N. Chi, D. L. Philips, and K. Y. Chan, In situ photoluminescence characterization of porous silicon formation. Thin Solid Films 342, 142, 1999. 

L. A. Jones, O. Yukseker, and D. F. Thomas, Dependence of photochemically etched porous silicon formation on photoetching wavelength and power, J. Vac. Sci. Technol. A14(3), 1505, 1996. 

J. Rappich and H. J. Lewerenz, Photo and potential controlled nano porous silicon formation on N silicon An in-situ FTIR investigation. Thin Solid Films 276, 25, 19%. 

P. Allongue, C. H. de Villeneuve, M. C. Bernard, J. E. Peou, A. Boutry-Forveille, and C. Levy-Clement, Relationship between porous silicon formation and hydrogen incorporation, Thin Solid Films 297, 1, 1997. 

A. Valance, Theoretical model for early stages of porous silicon formation fromn- andp-Types silicon... 

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