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Silicon detector, position sensitive

Figure 12.4 Bending response of a cantilever (as measured by the voltage output from a position-sensitive detector) to applied voltage pulse with and without TNT adsorbed on the surfaces. The bending of the uncoated cantilever follows the time profile of the applied voltage pulse (except the lengthening of the rise and fall times) and is presumably due to the difference between the thermal expansion coefficients of silicon and the doping material. The exothermic nature of the TNT deflagration event is clear due to the enhancement in bending of the cantilever. Figure 12.4 Bending response of a cantilever (as measured by the voltage output from a position-sensitive detector) to applied voltage pulse with and without TNT adsorbed on the surfaces. The bending of the uncoated cantilever follows the time profile of the applied voltage pulse (except the lengthening of the rise and fall times) and is presumably due to the difference between the thermal expansion coefficients of silicon and the doping material. The exothermic nature of the TNT deflagration event is clear due to the enhancement in bending of the cantilever.
Detection of backscattered ions is normally performed by a silicon surface barrier detector at high scattering angles for increased surface sensitivity, as indicated in Figure 67. The detector position is often variable about the specimen position to allow various scattering angles to be chosen. [Pg.907]

SRXRD patterns were measured during welding by positioning the beam at a predetermined location with respect to the welding electrode. A 50 mm, 2048-element position sensitive silicon photodiode array detector was used to record the diffraction patterns. The detector together with the associated ST 121 data acquisition system was manufectured by... [Pg.205]

CCD detector consists of 224 linear photodetector arrays on a silicon chip with a surface area of 13 x 18 mm (Fig. 4.16). The array segments detect three or four analytical lines of high analytical sensitivity and large dynamic range and which are free from spectral interferences. Each subarray is comprised of pixels. The pixels are photosensitive areas of silicon and are positioned on the detector atx -y locations that correspond to the locations of the desired emission lines generated by an echelle spectrometer. The emission lines are detected by means of their location on the chip and more than one line may be measured simultaneously. The detector can then be electronically wiped clean and the next sample analysed. The advantages of such detectors are that they make available as many as ten lines per element, so lines which suffer from interferences can be identified and eliminated from the analysis. Compared with many PMTs, a CCD detector offers an improvement in quantum efficiency and a lower dark current. [Pg.103]


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See also in sourсe #XX -- [ Pg.897 ]




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