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Silicon compact

Figure 16.14 Scanning electron microscopy images of microstructures (a) before and (b) after nitridation of a silicon compact. The nitridation reaction was conducted at 1673 K for 8 h under 0.1 MPa nitrogen pressure. Figure 16.14 Scanning electron microscopy images of microstructures (a) before and (b) after nitridation of a silicon compact. The nitridation reaction was conducted at 1673 K for 8 h under 0.1 MPa nitrogen pressure.
In addition to anodes with a simple connecting head, there are cylindrical double anodes that have cable connectors cast on at both ends and that can be used in the construction of horizontal or vertical anode chains. Anodes of graphite or magnetite are more compact than anodes of high-silicon iron because of the danger of fracture. [Pg.220]

The fuel for the Peach Bottom reactor consisted of a uranium-thorium dicarbide kernel, overcoated with pyrolytic carbon and silicon carbide which were dispersed in carbon compacts (see Section 5), and encased in graphite sleeves [37]. There were 804 fuel elements oriented vertically in the reactor core. Helium coolant flowed upward through the tricusp-shaped coolant channels between the fuel elements. A small helium purge stream was diverted through the top of each element and flowed downward through the element to purge any fission products leaking from the fuel compacts to the helium purification system. The Peach... [Pg.448]

An integrated circuit (IC) is a monolithic assembly of electrically isolated circuit elements. What this means is that each circuit element is formed on top of, or beneath, other circuit elements to form a compact assembly. Each conductive layer is separated by a non-conducting layer, usually composed of an oxide such as silicon dioxide, Si02- The assembly includes... [Pg.313]

Fig. 33. Variation of dimensionless radius with dimensionless time for compact carbon black particles suspended in silicone oil undergoing a simple shear flow. Top Data for initial radius Ho 1.7 mm for different viscosities and different shear rates, but with Fa = 0.28. Bottom Data for initial radius R0 = 2.0 mm for different densities and different shear rates, but with Fa 0.28. For all cases the erosion rate constant kc = 0.37. (See Eq. 53). Fig. 33. Variation of dimensionless radius with dimensionless time for compact carbon black particles suspended in silicone oil undergoing a simple shear flow. Top Data for initial radius Ho 1.7 mm for different viscosities and different shear rates, but with Fa = 0.28. Bottom Data for initial radius R0 = 2.0 mm for different densities and different shear rates, but with Fa 0.28. For all cases the erosion rate constant kc = 0.37. (See Eq. 53).
There are, however, many approaches to DNA sequencing, and even some recent instruments such as the sequencer made by LI-COR [28] do not use a CCD. The latter uses instead a very-low-noise silicon avalanche photodetector to excite near infrared-emitting dyes. The source is a laser diode emitting at 785 nm. It is a compact system that can be mounted on a focusing stage with confocal optics and it is meant for small laboratories that do not have HTS requirements. [Pg.100]

Manufacturing processes are well developed for silicon wafers. To avoid particle contamination, compact clusters of processing units operate in 100-level clean rooms, which for small companies are often rented in larger complexes at approximately 400/ft2-yr. [Pg.302]

The amorphous silica matrixes are porous network structures that allow other species to penetrate [44]. Thus, the doped dye molecules have the ability to react with targets. However, the reaction kinetics is significantly different than the molecules in a bulk solution. In the synthesis of DDSNs, commonly used silicon alkoxides including TEOS and TMOS have tetrahedron structures, which allow compact polycondensation. As a result, the developed silica nanomatrix can be very dense. The small pore sizes provide limited and narrow pathways for other species to diffuse into the silica matrix. [Pg.245]

Laser ablation of TiC targets was studied by De Maria et al. (1997). TiC films were realized on oriented [111] silicon. During ablation the chamber was kept under a dynamic vacuum (1.5 10 4 Pa) the laser fluence was varied in the range 0-15 J/cm2. Different ablation mechanisms, corresponding to different film characteristics, were observed related to the laser fluence values. At low fluence values (0-3 J/cm2), a film of composition TiC2 was obtained. Films obtained at 3-8 J/cm2 showed a composition close to TiC they had the best characteristics of composition, crystallinity and compactness. [Pg.595]

A photodetector with a suitable spectral response for the detection of the fluorescence emission. As mentioned above, the fluorescence of most Cr3+-activated materials consists of either the red R-lines or a broadband infrared emission with the peak wavelengths ranging from -750 to 1000 nm, or both emissions. Thus, the widely available, compact and inexpensive silicon PIN photodiodes are the most suitable photodetectors for these applications. In some particular circumstances, where high speed and high sensitivity of detection are required, a silicon-based avalanche diode could be the best alternative to the PIN photodiode, at small price premium ... [Pg.356]

Quartzite. Quartzite is a very compact, exceptionally hard and tough meta-morphic rock derived from sandstone. It consists mainly of rather large crystals of quartz (composed of silicon dioxide) naturally cemented by secondary quartz. Most varieties of quartzite contain over 90% quartz, and in some cases the quartz content exceeds 95% of the total weight of the stone. The color of most quartzite is white or light yellow, but if it contains iron oxide impurities it is red, while other metal oxide impurities may cause the rock to display patchy color variations. Quartzite is very hard, which makes it difficult to quarry. Nevertheless, because of its strength and resistance to weathering, it has occasionally been used for construchon, sculphng statuary, and ornamentation. [Pg.61]

A nanometer-sized silicon nitride, compacted into bulk sample, showed a strong piezoelectric constant 2613 X 10 12 [C/N]. It is interpreted by the charge accumulation in the interfaces and the surfaces of microvoids (67). [Pg.424]


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See also in sourсe #XX -- [ Pg.689 ]




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Compact nitridation, silicon powders

Silicon compaction

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