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Silicon carbide melting point

There are, of course, many more ceramics available than those listed here alumina is available in many densities, silicon carbide in many qualities. As before, the structure-insensitive properties (density, modulus and melting point) depend little on quality -they do not vary by more than 10%. But the structure-sensitive properties (fracture toughness, modulus of rupture and some thermal properties including expansion) are much more variable. For these, it is essential to consult manufacturers data sheets or conduct your own tests. [Pg.166]

The nitrides reviewed here are those which are commonly produced by CVD. They are similar in many respects to the carbides reviewed in Ch. 9. They are hard and wear-resistant and have high melting points and good chemical resistance. They include several of the refractory-metal (interstitial) nitrides and three covalent nitrides those of aluminum, boron, and silicon. Most are important industrial materials and have a number of major applications in cutting and grinding tools, wear surfaces, semiconductors, and others. Their development is proceeding at a rapid pace and CVD is a major factor in their growth. [Pg.265]

The process competes with the traditional method of fiber production in which the precursor material is melted, usually in an arc furnace, then drawn through spinnerets and spun or impinged by high pressure air. The melt-spin process is not well suited to materials with high melting points such as zirconia, silicon carbide, or pure alumina. [Pg.465]

Diamond and silicon carbide are nonconductors of electricity and have very high melting points. The melting point of diamond is about 3500°C and that of SiC 2830°C. [Pg.54]

The conventional industrial method for the synthesis of a-silicon carbide is to heat silica (sand) with coke in an electric furnace at 2,000-2,500 °C. However, because of the high melting point of the product, it is difficult to fabricate by sintering or melt techniques. Thus, the discovery of a lower temperature fabrication and synthesis route to silicon carbide by Yajima and coworkers in 197526,27 proved to be an important technological breakthrough. This is a preceramic polymer pyrolysis route that has been developed commercially for the production of ceramic fibers. [Pg.320]

The formation of silicon carbide from silicon and carbon is a well-known reaction and can occur at temperatures well below the melting point of... [Pg.161]

Each constituent atom of a covalent crystal is linked to its neighbours through directed covalent bonds. The crystal structure is determined by the spatial dispositions of these bonds. Because primary valence forces are involved, such solids are hard and have high melting points, e.g. diamond, silicon carbide, etc. Relatively few entirely covalent solids have been studied at elevated temperatures and it is, therefore, premature to comment on their decomposition characteristics. [Pg.5]

Covalent network. A solid that is extremely hard, that has a very high melting point, and that will not conduct electricity either as a solid or when molten is held together by a continuous three-dimensional network of covalent bonds. Examples include diamond, quartz (Si02), and silicon carbide (SiC). The electrons are constrained in pairs to a region on a line between the centers of pairs of atoms. [Pg.161]

Alumina is the most important oxidic abrasion-resistant material. Metal carbides are in some ways superior to oxides with respect to hardness and melting point, but they are much more brittle than the oxides and are only used in isolated instances as wearing bodies. Silicon carbide is characterized by its low thermal expansion and high thermal conductivity and has proved to be more resistant to thermal shock than oxides. Zirconia is tougher than alumina its modulus of elasticity is only about half as large, and it is comparable with that of steel. Zirconia is therefore very suitable for compound structures with steel. At present, the applications of ceramic sintered materials in chemical plant construction are slide rings, pump parts, and slide bearings. [Pg.528]


See other pages where Silicon carbide melting point is mentioned: [Pg.540]    [Pg.540]    [Pg.26]    [Pg.201]    [Pg.52]    [Pg.390]    [Pg.361]    [Pg.444]    [Pg.86]    [Pg.26]    [Pg.201]    [Pg.398]    [Pg.539]    [Pg.285]    [Pg.316]    [Pg.934]    [Pg.934]    [Pg.136]    [Pg.462]    [Pg.390]    [Pg.321]    [Pg.229]    [Pg.205]    [Pg.172]    [Pg.926]    [Pg.163]    [Pg.230]    [Pg.420]    [Pg.356]    [Pg.321]    [Pg.56]    [Pg.379]    [Pg.81]    [Pg.145]    [Pg.486]    [Pg.308]    [Pg.313]    [Pg.683]    [Pg.685]   
See also in sourсe #XX -- [ Pg.10 ]




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