Shallow Level Complexes Containing Hydrogen

The members of this group of shallow acceptors share a similar structure. They consist of a substitutional impurity binding one hydrogen or deuterium atom in its vicinity. Extensive far infrared spectroscopy studies 

The splitting of the C- and D-lines of the elemental acceptor aluminum is consistent with the tetrahedral symmetry Td of this impurity in a substitutional site. The stress behavior of A(D,C), on the other hand, can be described with a trigonal acceptor whose ground state is presplit along one of the four [111] directions. The ls-like ground states of the acceptors A(H,Si) and A(D,Si) are presplit by 1.07 meV. Their uniaxial stress behavior is the same as of A(H,C). It is convenient to assume that the internal splitting of the ls-state is caused by an internal short-range stress S that affects the ls-state but leaves the /7-like bound excited states undisturbed. 

The centers A(Be,H) and A(Zn,H) form in crystals grown in a hydrogen atmosphere that are doped with Be and Zn, respectively (McMurray 

Theoretical studies of hydrogen-containing complexes have been performed primarily for silicon (Van de Walle et al., 1989 Van de Walle et al., 1988 DeLeo and Fowler, 1985). Recently, Denteneer et al. (1989b) have 

Earlier studies of A(H,Si) at lower resolution and lower signal-to-noise ratios (Haller et al., 1980) did not reveal the small components of the 

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