Shallow Donors in Multi-Valley Semiconductors

With m in units of me, 7b = 4.2544 x 10 fi ( s/m )2 B(T). For shallow donors in multi-valley semiconductors, to is the electron transverse effective mass mnt of Table 3.4 and for QHDs in direct-band-gap semiconductors, it is the effective mass mn at the T minimum of the CB of Table 3.6. For the shallow acceptors where the effective Rydberg R oa is defined as Roo/li, Bo is equal to Rloa/jips- Values of Bo for shallow donors and acceptors in different semiconductors are given in Table 8.12. 

In the Zeeman experiments, two effects can be distinguished the linear one, which produces a splitting of the zero-field lines, and the quadratic Zeeman effect, producing a shift of the Zeeman components. 

The symmetry classification of the components of the odd-parity donor states with to = 0 and 1 split by a magnetic field in silicon and germanium has been given by [122]. 

When neglecting spin, which gives the same splitting for all the levels, the linear Zeeman effect of shallow donors is essentially the splitting by the magnetic field of EM states with to 0, that is, the np i lines in the experimental spectra. Their splitting is  

The splitting with the magnetic field orientation of a np i line in germanium associated with the four ellipsoids oriented along 111 directions has been calculated and put in a graphical form by [53]. It is given here in the form of Table 8.14. 

---