Effective Rydberg

On the other hand, recent work on the double-electron excitation from the 2s subshell of Neon to newly established DES embedded in one- and two-electron continua, although they obey an effective Rydberg-like energy formula, show no tendency toward a symmetric geometry of fragmentation due to valence-core electron interactions [59]. 

Table 5.1. Binding energies of the first EM even-parity donor states for 7 < 1 in effective Rydberg units [13]...

The 2p i — 3p i energy difference can be used to determine the effective Rydberg when 7 is known, or inversely, a value of 7 when the effective Rydberg is known... 

The effective Rydberg values for GaAs and InP in this table differ slightly from the ones 5.74 and 7.33 meV, respectively) given by [56]. 

For c-GaN, the effective Rydberg value calculated for mn = 0.19me and s = 9.5 is 28.6 meV. For w-GaN, a difference between mn// and mn would produce a splitting of the n = 2 level into 2s, 2po and 2pm 1 1 states. Calculations including central-cell corrections have been performed by [42], resulting in Table 5.11. 

Table 5.12. First nLj acceptor energy levels in semiconductors in units of the effective Rydberg R ooa = Roo/7i s as a function of the VIS parameter /./ in the strong s-o coupling limit in the spherical approximation. R is 24.46 and 4.34 meV for silicon and germanium, respectively [3]...

Table 5.3 gives a semi-empirical value of the effective Rydberg R ood for EM donors in 3C-SiC. It is the ratio of the experimental 3p i — 2p i spacing of the Nc spectrum obtained from Table 6.10 to the same spacing in atomic units, obtained by a linear interpolation of the calculated energy levels of Table 5.2 for 71/3 = 0.7181. This value of R ood (34.85 meV) is used to calculate the energies of the other donor levels by the same interpolation method. The first two rows of Table 6.10 gives the experimental positions of the lines attributed to Nc and to the EMD centre in 3C-SiC by Moore et al. [170]. The calculated... 

With m in units of me, 7b = 4.2544 x 10 fi ( s/m )2 B(T). For shallow donors in multi-valley semiconductors, to is the electron transverse effective mass mnt of Table 3.4 and for QHDs in direct-band-gap semiconductors, it is the effective mass mn at the T minimum of the CB of Table 3.6. For the shallow acceptors where the effective Rydberg R oa is defined as Roo/li, Bo is equal to Rloa/jips- Values of Bo for shallow donors and acceptors in different semiconductors are given in Table 8.12. 

It is interesting that, because of the much smaller value of the effective Rydberg constant in the solid, the highest n states are actually much... 

As one proceeds to the heavier particle type atoms, the effective Rydberg scales by the ratio of particle mass to electron mass. This has the effect, for example, of moving low Z pionic spectra into the soft X-ray region of one to a few kilovolts. 

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