Shadow mask process structure

Fig. 22. Fabrication process flow of a newly proposed normal top-emission OLED pixel employing cathode-contact structure (a) a-Si H TFT, (b) reflective anode, (c) step-covering layer and separator, (d) organic layer evaporation through the shadow mask on the anode, (e) cathode evaporation.

Electrical measurement of the dielectric constant is done through the fabrication of metal—oxide—semiconductor capacitor structures, where the ULK serves as the dielectric of the capacitor. A doped Si wafer is used as the substrate, on which the ULK film is deposited. This ULK film is subjected to CMP, say, or any other process whose impact on ULK characteristics needs to be quantified. An aluminum film is deposited on the backside of the Si wafer to form one of the capacitor contacts. Using a shadow mask, aluminum dots of varying diameters are evaporated onto the surface of the ULK film, to form the other terminal of the capacitor. Each aluminum dot is probed to measure its capacitance (at about 100 kHz). Evaporation through a shadow mask allows for the formation of metal contacts without altering the dielectric further— as would be the case if reactive-ion-etch were used to form the contacts. (It should be noted that more complex process flows can be used to eliminate concerns such as dot-size variation, the effect of probe-tip impact on the dielectric being tested, etc.) The results of electrical measurement of the k-value increase post-CMP of the variety... 

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