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Semiconductivity / semiconductor

In comparison with traditional inorganic semiconductors, semiconducting polymers cannot be considered materials with ultra-high purity. As a result, although many device concepts have been demonstrated using semiconducting polymers as the active materials, there has been considerable skepticism that these novel semiconductors could be used in commercial applications. [Pg.112]

Semiconductors. Semiconducting materials are of great practical importance in electronics. Ge, GaAs, ZnSe, and CuBr, are examples and they have bonding that can be described as intermediate between ideal covalent and ideal ionic. Each atom is bonded to four others in a tetrahedron, the zinc blende structure. [Pg.169]

Bassler, H. 2000. Charge transport in random organic semiconductors. Semiconducting polymers Chemistry, physics and engineering, eds. G. Hadziioannou and P.E van Hutten. Weinheim Wiley VCH. [Pg.1455]

Results of numerous items of research have shown that, in theory, any material can be used in the design of a gas sensor, regardless of its physical, chemical, structural, or electrical properties (Korotcenkov 2010,2011). Prototypes of gas sensors based on covalent semiconductors, semiconducting metal oxides, solid electrolytes, polymers, ionic membranes, organic saniconductors, and ionic salts have already been tested (Sadaoka 1992 Gopel 1996 Haugen and Kvaal 1998 Monkman 2000 Talazac et al. 2001 Eranna et al. 2004 Adhikari and Majumdar 2004). As shown in Table 1.23, these materials may be used... [Pg.37]

In contrast to metals, most studies have concentrated on insulators and semiconductors where the optical structure readily lends itself to a straightforward interpretation. Within certain approximations, the imaginary part of the dielectric fiinction for semiconducting or insulating crystals is given by... [Pg.118]

Typical results for a semiconducting liquid are illustrated in figure Al.3.29 where the experunental pair correlation and structure factors for silicon are presented. The radial distribution function shows a sharp first peak followed by oscillations. The structure in the radial distribution fiinction reflects some local ordering. The nature and degree of this order depends on the chemical nature of the liquid state. For example, semiconductor liquids are especially interesting in this sense as they are believed to retain covalent bonding characteristics even in the melt. [Pg.132]

Free-electron lasers have long enabled the generation of extremely intense, sub-picosecond TFlz pulses that have been used to characterize a wide variety of materials and ultrafast processes [43]. Due to their massive size and great expense, however, only a few research groups have been able to operate them. Other approaches to the generation of sub-picosecond TFlz pulses have therefore been sought, and one of the earliest and most successfid involved semiconducting materials. In a photoconductive semiconductor, carriers (for n-type material, electrons)... [Pg.1248]

As outlined above, electron transfer through the passive film can also be cmcial for passivation and thus for the corrosion behaviour of a metal. Therefore, interest has grown in studies of the electronic properties of passive films. Many passive films are of a semiconductive nature [92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102 and 1031 and therefore can be investigated with teclmiques borrowed from semiconductor electrochemistry—most typically photoelectrochemistry and capacitance measurements of the Mott-Schottky type [104]. Generally it is found that many passive films cannot be described as ideal but rather as amorjDhous or highly defective semiconductors which often exlribit doping levels close to degeneracy [105]. [Pg.2726]

Semiconductors may also be made from a maferial which is normally an insulator by infroducing an impurify, a process known as doping. Figure 9.9 shows fwo ways in which an impurify may promote semiconducting properties. In Figure 9.9(a) fhe dopanf has one more valence election per atom fhan fhe hosf and confribufes a band of filled impurify levels 1 close to fhe conduction band of fhe hosf. This characterizes an n-fype semiconductor. An example is silicon (KL3s 3p ) doped wifh phosphoms (KL3s 3p ), which reduces fhe band gap to abouf 0.05 eY Since kT af room femperafure is abouf 0.025 eY the phosphoms... [Pg.350]

The highly conductive class of soHds based on TTF—TCNQ have less than complete charge transfer (- 0.6 electrons/unit for TTF—TCNQ) and display metallic behavior above a certain temperature. However, these soHds undergo a metal-to-insulator transition and behave as organic semiconductors at lower temperatures. The change from a metallic to semiconducting state in these chain-like one-dimensional (ID) systems is a result of a Peieds instabihty. Although for tme one-dimensional systems this transition should take place at 0 Kelvin, interchain interactions lead to effective non-ID behavior and inhibit the onset of the transition (6). [Pg.239]

Photovoltaic Devices. For many inorganic semiconductors, absorption of light can be used to create free electrons and holes. In an organic semiconducting soHd, however, absorption of a photon leads to the formation of a bound electron—hole pair. Separation of this pair in an electric field can... [Pg.244]

The polysdanes are normally electrical insulators, but on doping with AsF or SbF they exhibit electrical conductivity up to the levels of good semiconductors (qv) (98,124). Conductivities up to 0.5 (H-cm) have been measured. However, the doped polymers are sensitive to air and moisture thereby making them unattractive for practical use. In addition to semiconducting behavior, polysilanes exhibit photoconductivity and appear suitable for electrophotography (qv) (125—127). Polysdanes have also been found to exhibit nonlinear optical properties (94,128). [Pg.263]

Semiconducting Properties. Sihcon carbide is a semiconductor it has a conductivity between that of metals and insulators or dielectrics (4,13,46,47). Because of the thermal stabiUty of its electronic stmcture, sihcon carbide has been studied for uses at high (>500° C) temperature. The Hall mobihty in sihcon carbide is a function of polytype (48,49), temperature (41,42,45—50), impurity, and concentration (49). In n-ty e crystals, activation energy for ioniza tion of nitrogen impurity varies with polytype (50,51). [Pg.465]

Semiconducting Ceramics. Most oxide semiconductors are either doped to create extrinsic defects or annealed under conditions in which they become non stoichiometric. Although the resulting defects have been carefully studied in many oxides, the precise nature of the conduction is not well understood. Mobihty values associated with the various charge transport mechanisms are often low and difficult to measure. In consequence, reported conductivities are often at variance because the effects of variable impurities and past thermal history may overwhelm the dopant effects. [Pg.357]

Copper(I) oxide [1317-39-1] is 2lp-ty e semiconductor, Cu2 0, in which proper vacancies act as acceptors to create electron holes that conduct within a narrow band in the Cu i7-orbitals. Nickel monoxide [1313-99-17, NiO, forms a deficient semiconductor in which vacancies occur in cation sites similar to those for cuprous oxide. For each cation vacancy two electron holes must be formed, the latter assumed to be associated with regular cations ([Ni " h = Semiconduction results from the transfer of positive charges from cation to cation through the lattice. Conduction of this type is similar... [Pg.358]


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See also in sourсe #XX -- [ Pg.11 , Pg.18 ]




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Semiconduction

Semiconductivity

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