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Self-regulation comparisons

An interesting observation results from the comparison between the Ti concentrations in Figures 15 and 17. When the Ti precursor input rate is increased by a factor of 2.93 (4.92/1.68) the Ti concentration of the film is increased by a factor of only 1.6 for a wafer temperature of 470°C, whereas it is increased by a factor of 2.73 when it is 420°C. This implies that as the deposition temperature increases, a type of selfregulating mechanism of film composition to the stoichiometric one is present, as in the case of Pb incorporation into PZT thin films. This kind of self-regulating mechanism can not generally be understood from simple thermodynamic calculations which usually predict formation of... [Pg.224]

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