Self-induced drift

N = lj2-N . With a half full well, L = 10 4.m and k = 10V, Tq will be approximately 3xl0 °s in silicon which means that from electrostatic repulsion alone we could not expect e < 10 unless f > 3 ps. Fortunately when N drops below kTC /e =N .,(kT/eVn), the diffusion current J= —kTpgradN will exceed the current caused by self-induced drift [6.9]. This current is... 

This proposal was in line with the improved luminance efficiency identified as the result of an enhanced balance in the charge carrier transport properties. In this case, it was proposed that the electrons would spread into the semiconductor, thereby causing the halide to be detached from the polymer backbone on contact formation between the cathode material and the PPV. The anions produced in this way would drift either in the self-induced electric field established by the cathode close to the electron reservoir, or in the external electric field. The subsequent precipitation that would be expected to occur would result in a chemical modification of the interface region of the contact materials that, ultimately, would cause aging and fatigue of the device. 

The system may need to periodically self-calibrate to compensate for any thermally induced calibration drift. 

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