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Schematic temperature

Figure 1-18 Schematic temperature-pressure history (volcanic, ... Figure 1-18 Schematic temperature-pressure history (volcanic, ...
Figure 7. Schematic temperature profile (right hand) showing the position of the thermal belt on the slope in relation to the shape of the valley cross section. (Reproduced with permission from... Figure 7. Schematic temperature profile (right hand) showing the position of the thermal belt on the slope in relation to the shape of the valley cross section. (Reproduced with permission from...
Fig. E2.7 Schematic temperature profiles between the parallel plates in relative motion at different temperatures with temperature-independent physical properties. Fig. E2.7 Schematic temperature profiles between the parallel plates in relative motion at different temperatures with temperature-independent physical properties.
Fig. 3. Schematic temperature-concentration (T-c) diagram. The dimensionless excluded volume v/l3 is related to T by Eq. (4) q> is proportional to c via Eq. (5). The various regimes are described in the text. Fig. 3. Schematic temperature-concentration (T-c) diagram. The dimensionless excluded volume v/l3 is related to T by Eq. (4) q> is proportional to c via Eq. (5). The various regimes are described in the text.
Figure 2 Schematic temperature dependence of charge-carrier concentration n a e-A°/r mobility p, T a, and conductivity Figure 2 Schematic temperature dependence of charge-carrier concentration n a e-A°/r mobility p, T a, and conductivity <r = n e L. (After Ref. 16.)...
Figure 9.6. Schematic temperature and concentration profiles in a thin film. Figure 9.6. Schematic temperature and concentration profiles in a thin film.
Figure 1. The schematic temperature dependence of the chemical potential of... Figure 1. The schematic temperature dependence of the chemical potential of...
Fig. 9.4. LPE growth on multicrystalline silicon substrate at INL [23] with equilibrium cooling (left) or yoyo technique (right). Before growth (950° with Sn), substrate roughness is about 2-3 pm. From top to bottom are cross section view, surface view and schematic temperature profile... Fig. 9.4. LPE growth on multicrystalline silicon substrate at INL [23] with equilibrium cooling (left) or yoyo technique (right). Before growth (950° with Sn), substrate roughness is about 2-3 pm. From top to bottom are cross section view, surface view and schematic temperature profile...
Figure 10.6 Schematic temperature modulated DSC (TMDSC) curves for a polymeric sample. (Reproduced with permission from T. Hatakeyama and F.X. Quinn, Thermal Analysis Fundamentals and Applications to Polymer Science, 2nd ed., John Wiley Sons Ltd, Chichester. 1999 John Wiley Sons Ltd.)... Figure 10.6 Schematic temperature modulated DSC (TMDSC) curves for a polymeric sample. (Reproduced with permission from T. Hatakeyama and F.X. Quinn, Thermal Analysis Fundamentals and Applications to Polymer Science, 2nd ed., John Wiley Sons Ltd, Chichester. 1999 John Wiley Sons Ltd.)...
Figure 357. Schematic temperature and drying curves showing the time dependency of the process... Figure 357. Schematic temperature and drying curves showing the time dependency of the process...
Figure 2. Schematic temperature profiles for catalyst (substrate) and bulk gas in a traditional catalytic combustor. Figure 2. Schematic temperature profiles for catalyst (substrate) and bulk gas in a traditional catalytic combustor.
Figure 3. Schematic temperature profiles for Catalytica catalytic combustion system in which the wall temperature is limited and complete combustion occurs after the catalyst. Figure 3. Schematic temperature profiles for Catalytica catalytic combustion system in which the wall temperature is limited and complete combustion occurs after the catalyst.
Fig. 36. Schematic temperature variation of intcrfacial stiffness kn I K and interfacial free energy, for an interface oriented perpendicularly to a lattice direction of a square a) or simple cubic (b) lattice, respectively. While for tl — 2 the interface is rough for all non zero temperatures, in d — 3 il is rough only for temperatures T exceeding the roughening transition temperature 7r (see sect. 3.3). For T < 7U there exists a non-zero free energy tigT.v of surface steps, which vanishes at T = 7 r with an essential singularity. While k is infinite throughout the noil-rough phase, k Tic reaches a universal value as T - T . Note that k and fml to leading order in their critical behavior become identical as T - T. ... Fig. 36. Schematic temperature variation of intcrfacial stiffness kn I K and interfacial free energy, for an interface oriented perpendicularly to a lattice direction of a square a) or simple cubic (b) lattice, respectively. While for tl — 2 the interface is rough for all non zero temperatures, in d — 3 il is rough only for temperatures T exceeding the roughening transition temperature 7r (see sect. 3.3). For T < 7U there exists a non-zero free energy tigT.v of surface steps, which vanishes at T = 7 r with an essential singularity. While k is infinite throughout the noil-rough phase, k Tic reaches a universal value as T - T . Note that k and fml to leading order in their critical behavior become identical as T - T. ...
Schematic temperature Change in quantum yield during... [Pg.76]

Figure 1. Schematic temperature dependence of the superconducting order parameters, where L Is for the mixed (s+d)-state and for the pure d j T - a -... Figure 1. Schematic temperature dependence of the superconducting order parameters, where L Is for the mixed (s+d)-state and for the pure d j T - a -...
Figure 2. Schematic temperature dependence of the upper critical field, H. . The dashed curves are not experimentally observable. Is the field parallel to the... Figure 2. Schematic temperature dependence of the upper critical field, H. . The dashed curves are not experimentally observable. Is the field parallel to the...
Fig. 8.31 The schematic temperature dependence of the mobility of the charge carriers in a doped inorganic semiconductor. At high temperatures, /i is limited by scattering of the charge carriers from acoustic phonons, at low temperatures by scattering from ions. After [35]. Fig. 8.31 The schematic temperature dependence of the mobility of the charge carriers in a doped inorganic semiconductor. At high temperatures, /i is limited by scattering of the charge carriers from acoustic phonons, at low temperatures by scattering from ions. After [35].
Fig. 12.10 (a) Schematic temperature program of the graphite furnace (1, Ar flow on 2, drying ... [Pg.447]

Fig. 13. Schematic temperature dependence of the electrical resistivity of magnetic RI compounds with negligible d-electron contribution. Fig. 13. Schematic temperature dependence of the electrical resistivity of magnetic RI compounds with negligible d-electron contribution.
This chapter is concerned with the effect of absorption of moisture (and other organics) on the micromechanics of failure of aerospace composite materials. Figure 12.1 shows a schematic temperature and humidity profile of a nulitary aircraft on a typical flight sortie... [Pg.335]

Figure 1. The schematic temperature dependence of the chemical potential of the solid, liquid, and gas phases. The phases with the lowest chemic potential are most st le at that temperature (shaded area). Figure 1. The schematic temperature dependence of the chemical potential of the solid, liquid, and gas phases. The phases with the lowest chemic potential are most st le at that temperature (shaded area).
The above list indicates sole emphasis on silicate characteristics observed in powder mounts. However, as Ono recommends, data from other microscopical techniques, such as polished section and thin section, can be routinely used in a corroborative manner. A schematic temperature-time curve and the relationships between the silicates and burning conditions are given in Figure 6-1 and Table 6-1, respectively. [Pg.46]

Fig. 6-1. Schematic temperature-time reiation of ciinker burning (Ono, 1980c). Fig. 6-1. Schematic temperature-time reiation of ciinker burning (Ono, 1980c).
Fig. 48. Schematic temperature variations of adiabatic longitudinal elastic constants in Ce HF compounds. In the various regimes c T) is determined by anhatmonic effects (r= fl ), magnetoelastic coupling (r A = CEF gap) and Gruneisen parameter coupling (F< T ). c, Cg are extrapolations from the anharmonic and magnetoelastic regimes, respectively. Fig. 48. Schematic temperature variations of adiabatic longitudinal elastic constants in Ce HF compounds. In the various regimes c T) is determined by anhatmonic effects (r= fl ), magnetoelastic coupling (r A = CEF gap) and Gruneisen parameter coupling (F< T ). c, Cg are extrapolations from the anharmonic and magnetoelastic regimes, respectively.
Fig. 1. Schematic temperature dependence of interaction parameters resulting from different ts pes of interactions in a pol3aner blend. (1-dispersive interactions, 2-free-volume interactions, 3-specific interactions, A-sum of 1-1-2, B-sum of 1-I-2-I-3). Fig. 1. Schematic temperature dependence of interaction parameters resulting from different ts pes of interactions in a pol3aner blend. (1-dispersive interactions, 2-free-volume interactions, 3-specific interactions, A-sum of 1-1-2, B-sum of 1-I-2-I-3).
Figure 5 Schematic temperature dependence of the shear modulus of an amorphous polymer. Solid line for a polymer with a molecular weight /Wi > Me, dashed line for a polymer with the molecular weight M2> Mi. Figure 5 Schematic temperature dependence of the shear modulus of an amorphous polymer. Solid line for a polymer with a molecular weight /Wi > Me, dashed line for a polymer with the molecular weight M2> Mi.
Figure 18 (a) Binodals of a symmetric, binary polymer blend confined into a film of thickness D= 2.6/ e as obtained by self-consistent field calculations. The strength of preference at one surface is kept constant. The surface interactions at the opposite surface vary, and the ratio of the surface interactions is indicated in the key. +1.0 corresponds to a strictly symmetric film, and -1.0 marks the interface localization-delocalization transition that occurs in an antisymmetric film. The dashed curve shows the location of the critical points. Filled circles mark critical points and open circles/dashed horizontal lines denote the three-phase coexistence (triple point) for - 0.735 and -1.0. The inset presents part of the phase boundary for antisymmetric boundaries, (b) Schematic temperature dependence for antisymmetric boundaries. The three profiles correspond to the situations (u), (m), and (I) in the inset of (a), (c) Coexistence curves in the// /-A/y plane. The ratio of surface interactions varies according to the key. The analogs of the prewetting lines for A//pw< 0 and ratios of the surface interactions, -0.735 and -1.0, are indistinguishable, because they are associated with the prewetting behavior of the surface with interaction, which attracts the A-component. Reproduced from Muller, M. Binder, K. Albano, E. V. Europhys. Lett. 2000, 50, 724-730, with authorization of http //epljournal.edpsciences.org/... [Pg.411]

Schematic temperature and heat flux profiles for a top-fired and a sidewall-fired reformer for identical process outlet conditions are seen in Figure 3.5 below. The top-fired furnace has a high heat flux at the inlet, whereas the sidewall-fired furnace has a more equally distributed heat flux profile. The top-fired furnace has an almost flat tube temperature profile, whereas in a sidewall-fired furnace the tube-wall temperatures increase down the reformer. The terrace-wall fired reformer has profiles similar to the sidewall-fired reformer, whereas the bottom-fired reformer has a larger heat flux in the lower part of the reformer. Schematic temperature and heat flux profiles for a top-fired and a sidewall-fired reformer for identical process outlet conditions are seen in Figure 3.5 below. The top-fired furnace has a high heat flux at the inlet, whereas the sidewall-fired furnace has a more equally distributed heat flux profile. The top-fired furnace has an almost flat tube temperature profile, whereas in a sidewall-fired furnace the tube-wall temperatures increase down the reformer. The terrace-wall fired reformer has profiles similar to the sidewall-fired reformer, whereas the bottom-fired reformer has a larger heat flux in the lower part of the reformer.
Figure 3.5 Schematic temperature and heat flux profiles in a top-fired and sidewaU-fired fiimace. Top Top-fired Side Sidewall-fired. Figure 3.5 Schematic temperature and heat flux profiles in a top-fired and sidewaU-fired fiimace. Top Top-fired Side Sidewall-fired.
Fig. 42. Schematic temperature dependence of the linewidth in HFS (full line) contributions due to the onsite Korringa relaxation Aff (narrow-dashed line) and inter-site spin fluctuations Afff (long-dashed line) are indicated separately. The parameters that have been used in these calculations are indicated in the text. Fig. 42. Schematic temperature dependence of the linewidth in HFS (full line) contributions due to the onsite Korringa relaxation Aff (narrow-dashed line) and inter-site spin fluctuations Afff (long-dashed line) are indicated separately. The parameters that have been used in these calculations are indicated in the text.
Fig. 15. Schematic temperature-dopant concentration, T-x, phase diagram for the cuprates. The dashed line labeled 7 represents the temperature below which some type of local pairing occurs leading to a suppression of low-energy excitations and the formation of the pseudogap. The solid line labeled denotes the temperature below which phase coherence develops, resulting in superconductivity. The thick solid line labeled delineates the superconducting region. Fig. 15. Schematic temperature-dopant concentration, T-x, phase diagram for the cuprates. The dashed line labeled 7 represents the temperature below which some type of local pairing occurs leading to a suppression of low-energy excitations and the formation of the pseudogap. The solid line labeled denotes the temperature below which phase coherence develops, resulting in superconductivity. The thick solid line labeled delineates the superconducting region.
Quasibinary system Reaction (schematically) Temperature (°C), and liquid composition (at.% Nd, Ba/Cu ratio) Estimated availability for crystal growth Remarks... [Pg.109]

Fig. 9.12. Measurement of vapor pressure schematic). Temperature is constant. Fig. 9.12. Measurement of vapor pressure schematic). Temperature is constant.
Fig. 14.28 Schematic temperature-density phase diagram of B2O3. As the liquid is cooled and approaches the glass transition, path (A), it undergoes a structural transition from a BO3- to a boroxol-dominated network. A similar structural transition ctm be induced by stretching the liquid, path (1). Along both paths, boroxols rings form to compensate the interned negative pressure... Fig. 14.28 Schematic temperature-density phase diagram of B2O3. As the liquid is cooled and approaches the glass transition, path (A), it undergoes a structural transition from a BO3- to a boroxol-dominated network. A similar structural transition ctm be induced by stretching the liquid, path (1). Along both paths, boroxols rings form to compensate the interned negative pressure...
Figure 50. (a) Schematic temperature dependence of the tilt angle 0 and polarization P at a second-order SmA - SmC transition, (b) Tilt angle versus temperature for DOBAMBC below the SmA - SmC transition at 95 °C (from Dumrongrattana and Huang [133]). [Pg.1592]

Fig. 5.6 Schematic temperature variation of a characteristic structural relaxation time in a supercooled polymer melt. It is assumed that approximately a ten times change in the relaxation time is required to give a significant change in some associated property such as expansivity or compressibility. This change takes place over a much wider range of temperature on the simulation time scale. Fig. 5.6 Schematic temperature variation of a characteristic structural relaxation time in a supercooled polymer melt. It is assumed that approximately a ten times change in the relaxation time is required to give a significant change in some associated property such as expansivity or compressibility. This change takes place over a much wider range of temperature on the simulation time scale.
Figure 11.23 Schematic temperature-versus-time plot showing both solution and precipitation heat treatments for precipitation hardening. Figure 11.23 Schematic temperature-versus-time plot showing both solution and precipitation heat treatments for precipitation hardening.

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