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Scaling phenomena silicon

The synthesis of these materials is outlined in Scheme I. Transmission electron microscopy shows that the morphology of nearly equimolar compositions of the siloxane-chloromethylstyrene block copolymers is lamellar, and that the domain structure is in the order of 50-300 A. Microphase separation is confined to domains composed of similar segments and occurs on a scale comparable with the radius of gyration of the polymer chain. Auger electron spectroscopy indicates that the surface of these films is rich in silicon and is followed by a styrene-rich layer. This phenomenon arises from the difference in surface energy of the two phases. The siloxane moiety exhibits a lower surface energy and thus forms the silicon-rich surface layer. [Pg.271]

The complexity of the system implies that many phenomena are not directly explainable by the basic theories of semiconductor electrochemistry. The basic theories are developed for idealized situations, but the electrode behavior of a specific system is almost always deviated from the idealized situations in many different ways. Also, the complex details of each phenomenon are associated with all the processes at the silicon/electrolyte interface from a macro scale to the atomic scale such that the rich details are lost when simplifications are made in developing theories. Additionally, most theories are developed based on the data that are from a limited domain in the multidimensional space of numerous variables. As a result, in general such theories are valid only within this domain of the variable space but are inconsistent with the data outside this domain. In fact, the specific theories developed by different research groups on the various phenomena of silicon electrodes are often inconsistent with each other. In this respect, this book had the opportunity to have the space and scope to assemble the data and to review the discrete theories in a global perspective. In a number of cases, this exercise resulted in more complete physical schemes for the mechanisms of the electrode phenomena, such as current oscillation, growth of anodic oxide, anisotropic etching, and formation of porous silicon. [Pg.442]

If the sulfur and silicon contents of a steel are not above normal, its scale melting temperature will be 2500 F (1371 C). If that temperature is reached on the steel surface, molten scale will run off the steel like water, a phenomenon termed washing. If the melted scale is permitted to drop into a bottom zone, it will solidify and begin to fill the heating space, requiring jackhammers for its removal. [Pg.270]

Although it was a simulation related to the cutting process, the brittle-ductile transition can be commonly evaluated by the critical depth of cut d<--Inamura et al. have developed a new simulation technique called renormalized molecular dynamics, which is able to deal with the dynamical phenomenon scaled from nanometer to micrometer. In the simulation, a defectless monocrystalline silicon was cut at the speed of 20 m/sec, the depth of cut of 1 pm, and in an absolute vacuum environment. [Pg.6]


See other pages where Scaling phenomena silicon is mentioned: [Pg.1]    [Pg.60]    [Pg.106]    [Pg.60]    [Pg.289]    [Pg.6]    [Pg.516]    [Pg.294]    [Pg.441]    [Pg.99]    [Pg.143]    [Pg.50]    [Pg.718]    [Pg.197]    [Pg.237]    [Pg.122]    [Pg.199]    [Pg.181]    [Pg.296]    [Pg.125]    [Pg.153]    [Pg.119]    [Pg.94]    [Pg.1008]    [Pg.139]    [Pg.218]   
See also in sourсe #XX -- [ Pg.63 , Pg.64 ]

See also in sourсe #XX -- [ Pg.63 , Pg.64 ]




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Scaling phenomena

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