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Sapphire structure

A variation of the E2 mode with the thickness of the AIN buffer layer in MOCVD 750 nm GaN/sapphire structures monitoring biaxial stress has been observed (TABLE 6) [31]. A correlation of E2 phonon modes with exciton energies in photoluminescence has been given [30,31]. [Pg.54]

The complex structure of the various solutions was investigated by Raman and IR absorption spectroscopy. Containers made of sapphire and KRS-5 were used for Raman and IR spectra measurements, respectively. Vibration spectra analysis was performed based on the band assignment [171, 187] presented in Table 45. [Pg.127]

It is evident in Figure 3.5 that the two displayed spectra are slightly different in the band intensities and observed spectral features. This approach is thus suitable for analysing the characteristic band structures to enhance the bio-compatibility of the sapphire lenses, and the surface passivation process enabled more optimized biocompatible lenses to be fabricated. [Pg.50]

A colorless mineral known as corundum (composed of aluminum oxide) is colorless. A red variety of corundum known as ruby, a precious stone, owes its color to impurities of chromium within the crystal structure of corundum. Blue and violet varieties of corundum are classified as sapphires, the blue being the result of iron and titanium impurities, and the violet of vanadium impurities within the corundum crystal structure. Another colorless mineral is beryl (composed of beryllium aluminum silicate) but blue aquamarine, green emerald, and pink morganite, are precious varieties of beryl including different impurities aquamarine includes iron, emerald chromium and vanadium, and morganite manganese. [Pg.53]

Fig. 12.7 InGaAsP/InP multi quantum well semiconductor structure process (a) Si02 etch mask deposition (b) PMMA spin coating (c) E beam lithography and develop (d) Si02 etch (e) PMMA stripping (f) InGaAsP membrane etch (g) Si02 stripping (h) Chip flipping and bonding to sapphire (i) InP substrate etch (j) Adhesive etch... Fig. 12.7 InGaAsP/InP multi quantum well semiconductor structure process (a) Si02 etch mask deposition (b) PMMA spin coating (c) E beam lithography and develop (d) Si02 etch (e) PMMA stripping (f) InGaAsP membrane etch (g) Si02 stripping (h) Chip flipping and bonding to sapphire (i) InP substrate etch (j) Adhesive etch...
The technique of atomic force microscopy (AFM) has permitted the direct observation of single polysilane molecules. Poly[//-decyl-(high molecular weight (4/w = 5,330,000 and Mn = 4,110,000), PSS, helicity, and rigid rod-like structure due to the aliphatic chiral side chains, was deposited from a very dilute (10-10 Si-unit) dm-3] toluene solution onto a (hydrophobic) atomically flat (atomic layer steps only present) sapphire (1012) surface. After drying the surface for a few minutes in a vacuum, AFM images were taken at room temperature in air in the non-contact mode.204,253 An example is shown in Figure 22, in which the polymer chain is evident as a yellow trace. [Pg.599]

An example of high-contrast resonant imaging of tissue structures with this source is shown in Figure 5.4a. Here, the white adipose tissue of a mouse omentum majus is imaged at a depth of -10 pm from the surface at a Raman shift of 2850 cm ( ump = 924 nm A tokes = 1254 nm). In contrast, for the same Raman shift, two synchronized Ti sapphire lasers (Potma et al. 2002) would typically have pump and Stokes wavelengths of -710 nm and -890 nm, respectively, and are much more strongly scattered in turbid tissue. [Pg.107]


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See also in sourсe #XX -- [ Pg.390 ]




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Crystal structure sapphire

Sapphire

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