Sapphire scanning electron microscopy

The surface morphology of ZnO films on sapphire, 3C-SiC/Si, and 6H-SiC substrates was also investigated by scanning electron microscopy (SEM) as... 

Structural characteristics of the planar a-plane GaN films were evaluated by X-ray diffraction (XRD) and plan-view transmission electron microscopy (TEM). XRD was performed using Gu Ka radiation in a Philips materials research diffractometer (MRD) Pro four-circle X-ray diffractometer operating in receiving slit mode. 26 —co scans of the a-GaN films, such as that shown in Figure 2.5, exhibited peaks that were indexed to the r-plane sapphire 1102, 2204, and 3306 reflections, and the 1120 GaN reflection. No GaN 0002 reflection was observed, demonstrating that within the detection limits of this technique, the films were uniformly a-plane-oriented. 

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