Rising edge

The semantics of the always statement implies that all statements in are to be executed only when a rising edge or a falling edge of clock occurs. We shall call this special always statement as a clocked always statement. 

The logic in the always statement implies that every time there is a rising edge on ClockA, variable Counter is incremented. Since Counter is as-... 

In this example, NextState is assigned a value only if there is a rising edge on Clk. Thus, four rising-edge-triggered flip-flops (needed to store values 0 through 15) are inferred for reg NextState. 

Here is a model for a parameterized N-bit binary up-down counter with synchronous preset and preclear controls. The counting is synchronized to the rising edge of a clock. 

Here is the behavioral model for the transmitter block TX. This model is a synthesizable model. Rising-edge-triggered flip-flops are inferred for variables TBR, TR, TRE, TBRE, DOUT, CBTT and PA this is because these variables are assigned values under the control of clock CK. 

Here the intention appears to be to store the value of PresentState in a flip-flop (rising-edge-triggered). After synthesis, not only is there a flip-flop for PresentState, there are also four flip-flops for Zout. This is because Zout is assigned under the control of a clock. It may or may not be the intention to generate flip-flops for Zout. If not, then a case statement needs to be written in a separate always statement in which Zout is assigned, this... 

Figure 14 shows the unpolarized absorption spectra of films of polythiophene [124] and its hexamer a-sexithienyl [125]. The hexamer solution spectrum is at almost the same energy. As in Fig. 12a, the oligomer shows structure on its rising edge, and the polymer spectrum is structureless. But in Fig. 14 the absorption thresholds differ by = 0.2 eV only one would then say that conjugation extends in PT over only about six monomers. One could show similar data for many other CPs. 

One might then expect a situation similar to the one sketched in Fig. 20, and perhaps assign the weak shoulder on the rising edge of the absorption (Fig. 12) to the exdton. This might explain the large increase in the RRS cross section near that energy, an effect that is known in semiconductors [179,180]. 

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