Resistivity, Conductivity, Thermoelectric Power

Values of the electrical resistivity q, of the electrical conductivity x if Q-values were converted from x-values, of the temperature coefficient of resistivity l/g-dg/dT, and of the absolute thermoelectric power a, all for room temperature, for polycrystalline samples (p) and single crystals (c) are  

PrSe PrSe NdSe NdSe NdSe NdSe 

Analysis of the reflection spectra led to the following high-frequency conductivities kq in 10 Q -cm i  

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In the next chapter (115), J.M. Fournier and E. Gratz have reviewed the transport properties of lanthanide/actinide compounds. These include the electrical resistivity, thermal conductivity, thermoelectric power, magnetoresistance and the Hall effect. As expected, most of this review deals with the electrical resistivity because of the preponderance of data oa this property, relative to the other four. Throughout this chapter the authors attempt to use the available information on the transport properties to help improve our understanding of the differences and similarities of... 

Calvet and Guillaud (S3) noted in 1965 that in order to increase the sensitivity of a heat-flow microcalorimeter, thermoelectric elements with a high factor of merit must be used. (The factor of merit / is defined by the relation / = e2/pc, where e is the thermoelectric power of the element, p its electrical resistivity, and c its thermal conductivity.) They remarked that the factor of merit of thermoelements constructed with semiconductors (doped bismuth tellurides usually) is approximately 19 times greater than the factor of merit of chromel-to-constantan thermocouples. They described a Calvet-type microcalorimeter in which 195 semiconducting thermoelements were used instead of the usual thermoelectric pile. 

The electrical resistivity data on crystals of indium(III) oxyfluoride indicate a nearly temperature independent conductor (3.6 X 10 2 fl-cm. at room temperature and 1.8 X 10-2 fl-cm. at liquid-helium temperature) with high negative thermoelectric power (—230 juV./°C.). These properties are similar to those observed for some conductive forms of indium(III) oxide. 

Collins et al. [63] and Sumannasekera et al. [64] later reported that electrical resistance R and thermoelectric power (TEP) of SWCNT bundles and thin films are sensitive to gas adsorption [Figure 14.7(b)]. The film conductance is changed dramatically upon exposure to O2, NO2, and NH3 gases, presumably due to charge transfer from the adsorbates on semiconducting tubes [6,63]. The TEP of SWCNT bundles was also found sensitive to inert gas such as N2 and... 

Two striking effects are observed in Fig. 10. One is the large decrease in the resistivity of the layered material relative to the nonlayered material for large Ls. The low resistivity (10 2 cm) persists even for relatively thick a-Si H layers (1200 A) and is of n-type conductivity from the sign of the thermoelectric power. The decrease in resistivity has been ascribed to transfer doping by the a-SiNjj H layers (Tiedje and Abeles, 1984). The other noteworthy effect in Fig. 10 is the large increase in resistivity when is reduced below 40 A. It... 

TRANSPORT PROPERTIES (ELECTRICAL RESISTIVITY, THERMOELECTRIC POWER AND THERMAL CONDUCTIVITY) OF RARE EARTH INTERMETALLIC COMPOUNDS... 

For transport properties of CeCujSij between 1.5 and 300 K (electrical resistivity, thermal conductivity and thermoelectric power) see Franz et al. (1978) and Gschneidner et al. (1983). Structural properties and band strucure are discussed by Jarlborg et al. (1983) details of crystal growth are given by Kletowski (1983). 

E. Gratz and M J. Zuckermann, Transport properties (electrical resistivity, thermoelectric power and thermal conductivity) of rare earth intermetallic compounds 117... 

The interaction between impurity ions with partially filled d or f electron shells and the conduction electrons of a metallic host can lead to variations in certain physical properties with temperature and magnetic field which have come to be associated with the Kondo effect . In zero magnetic field, these temperature-dependent anomalies in the physical properties scale with a characteristic temperature Tk, the so-called Kondo temperature, above which the matrix-impurity system behaves magnetically and below which the matrix-impurity system behaves nonmagnetically. The physical properties which exhibit anomalies attributable to the Kondo effect include the electrical resistivity, magnetic susceptibility, thermoelectric power, specific heat and, in systems where appropriate, superconducting properties such as the critical temperature and the jump in specific heat which occurs at T. ... 

Interpolated Results of Measurements of the Specific Electrical Resistivity, R (4.2 to 1300 K), Thermal Conductivity (80.3 to 376.4 K), and the Absolute Thermoelectric Power, SjhN (80-3 to 376.4 K) of High-Density Zone-Melted ThN [21]. (Extrapolated values are given in parentheses.)... 

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