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Relaxed configuration

A disciplined approach must be sustained to maintain the integrity of configuration management. It can be tempting to relax configuration management just to release resources and reduce costs. Consequential problems that often arise include ... [Pg.85]

Fig. 15 Energy difference AE (in eV/atom) between unrelaxed and relaxed configurations of a Pd/Ni(l 10) surface alloy for 0.5 ML Pd coverage. Fig. 15 Energy difference AE (in eV/atom) between unrelaxed and relaxed configurations of a Pd/Ni(l 10) surface alloy for 0.5 ML Pd coverage.
Figure 1. Local rearrangement of bonds used to generate random networks from the diamond cubic structure, (a) Configuration of atoms and bonds in the diamond cubic structure and (b), relaxed configuration of atoms and bonds after switching bonds. Figure 1. Local rearrangement of bonds used to generate random networks from the diamond cubic structure, (a) Configuration of atoms and bonds in the diamond cubic structure and (b), relaxed configuration of atoms and bonds after switching bonds.
AAT has a single polypeptide chain of 394 amino acid residues with three CHO side chains, giving a total molecular mass of 51kDa. The active site is contained in a "stressed reactive loop on reaction with a serine protease, a small fragment is cleaved, and the remainder of the protein assumes a relaxed configuration. ... [Pg.550]

Figure 86. Small s part of n, calculated from relaxed configurations of the topologically constrained generalized tiling model for p = (>, r = 4, t = 1.4 (bullets). The solid line represents a fit to Eq. (3.26). Figure 86. Small s part of n, calculated from relaxed configurations of the topologically constrained generalized tiling model for p = (>, r = 4, t = 1.4 (bullets). The solid line represents a fit to Eq. (3.26).
Figure 87. Relaxed configurations of the topologically unconstrained generalized tiling model for = r = 4, r = 0.635 (a) sweep 500 (b) sweep 1000 (c) sweep 1500 (d) sweep 2000 (e) sweep 5000 (/) sweep 12,000. Figure 87. Relaxed configurations of the topologically unconstrained generalized tiling model for = r = 4, r = 0.635 (a) sweep 500 (b) sweep 1000 (c) sweep 1500 (d) sweep 2000 (e) sweep 5000 (/) sweep 12,000.
FIGURE 2 Potential well and wavefunction for the F center (a) before excitation (normal configuration) and (b) after excitation (relaxed configuration)The four-level energy scheme is shown between the wells. All energies are plotted with respect to the conduction band, hence the relaxed excited state appears to be at a higher energy than the first excited state. [Pg.51]

FIGURE 3 Structure and energy-level diagram of the Fa(II) center (a) before optical excitation (normal configuration) and (b) after optical excitation (relaxed configuration). [Pg.51]

Note that the result is just the energy needed to place the second charge in the medium with the material frozen in its relaxed configuration about the first charge (or vice versa). It includes both the direct interaction and the material-mediated interaction. [Pg.75]

Figure 5.2. Relaxed configurations of 7-AI2O3 (100) surface for different hydroxyl coverages (9 in OH nm . The most relevant surface sites are quoted. Ain stands for aluminum atoms surrounded by n oxygen atoms, and HO-jUm for OH groups linked to m aluminum atoms. Oxygen atoms are black, aluminum atoms are shown in gray whereas hydrogen atoms are whitel l. Figure 5.2. Relaxed configurations of 7-AI2O3 (100) surface for different hydroxyl coverages (9 in OH nm . The most relevant surface sites are quoted. Ain stands for aluminum atoms surrounded by n oxygen atoms, and HO-jUm for OH groups linked to m aluminum atoms. Oxygen atoms are black, aluminum atoms are shown in gray whereas hydrogen atoms are whitel l.

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See also in sourсe #XX -- [ Pg.217 ]




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