Regrowth velocity

The series of spectra presented in Fig. 10.4 shows the reduction in thickness of the amorphous layer as a function of anneal time for a (100) Si sample held at 550°C. This data demonstrates that the regrowth originates at the interface between the amorphous layer and the underlying single crystalline Si and proceeds to the surface. The interface on (100) Si shifts to the surface linearly with time, indicating a uniform regrowth velocity. 

Channeling measurements have been used to study the epitaxial regrowth of Ge and Si crystals amorphized by ion implantation for a variety of crystal orientations (Csepregi et al. 1977). These studies have shown that, with the exception of (111) orientated Si crystals and samples cut within 16° of the (111) direction, the amorphous/crystal interface moves with a constant velocity toward the surface (at a fixed annealing temperature) and maintains a laterally uniform front. 

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