Regrowth rate orientation

Csepregi L, Kennedy E F, Gallagher T J, Mayer J W and Sigmon T W 1978 Substrate orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si J. Appi. Phys. 49 3906... 

Fig. 10.5. Regrowth rate versus 103/r (K) for different substrate orientations of amorphous-implanted Si and Ge (from Lau et al. 1980)...

Fig. 10.9. Regrowth rate versus orientation of the Si substrate for implanted amorphous Si...

The role of the a-c interface in Ion Beam Induced Epitaxial Crystallization (IBIEC) is demonstrated in Fig. 10.11, which shows that the regrowth rate is orientation dependent. The data shows that the rate is much lower (almost by a factor of 4) for (111) substrates relative to (100) substrates. These results suggest that the same interfacial defects that are responsible for thermal regrowth also are important in IBIEC, with the role of the ion beam being that of changing the average defect concentration. 

---