Reflection electron diffraction

We have some information on the oxidation of iron which supports some of the ideas on oxidation presented by Professor Cabrera. Reflection electron diffraction photographs were made on (100) surfaces of single crystal iron that had a thin oxide layer. The mean thickness of these oxide layers, as measured by electro-... 

The alternative electron diffraction technique is referred to as reflection electron diffraction and uses a comparatively high energy primary beam (typically 10—50 keV) at a grazing incidence of 1—3°. There is, however, very little difference between LEED and RHEED in the depth of material probed, since, for example, a 50 keV electron at 3° incidence angle will have approximately the same momentum perpendicular to the surface as a normally incident 150 eV electron. To obtain the complete space group symmetry with RHEED, however, it is necessary to use at least two primary beam directions. 

Reflection electron diffraction patterns of films condensed from a cryolite source according to Pulker and Zaminer [296]. 

Reflection electron diffraction patterns of evaporated ZnS films of varying thickness . 

To illustrate the application of such combinations we present results of an investigation obtained from the application of profile analysis in the IEU 100 and reflection electron diffraction, as well as the energy dispersive analysis of a surface layer. 

Reflection electron diffraction pattern of the etched surface shown in Fig. 16 d (Na20 enrichment)... 

Reflection electron diffraction patterns from glass surfaces treated in hexadecane solutions of cerotic and stearic acids were obtained and compared with diffraction patterns taken by Bigelow [5] of monolayers of the same acids. The agreement was sufficient to conclude that the... 

The composition of the anodic deposition layer was studied by using ex-situ reflection electron diffraction by Cohen et al." They found Y-FeOOH for the deposited film formed on platinum from perchlorate solution containing Fe. Ohtsuka et al. estimated the composition from Raman spectroscopy as well as in-situ EQCM and ellipsometiy to be amorphous Fe00H-H20 (i.e., FefOHls)/ ... 

The balance between evaporation and condensation of Ga and As determines whether the surface is Ga rich or As rich. The question of whether the surface is Ga rich or As rich is critical to the growth behavior in many other ways and affects the ultimate quality of the grown layer significantly. To understand how the Ga/As ratio is set it is necessary to look at the details of adsorption and desorption primarily of As. Some of the behaviors are illustrated in Figure 10.24. In practice one ean determine the cross-over from Ga rich to As rich by the transition from a (2x4) to a (4x2) reflection electron diffraction pattern (see Chapter 11) as one adjusts the As flux. 

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