Quantum well heterostructure

Stripe—geometry gain—guided AlGaAs-GaAs quantum well heterostructure lasers have been fabricated from masked hydrogenation to produce the resistive regions necessary to current confinement. 

E, Kapon, Lateral Patterning of Quantum Well Heterostructures by Growth of Nonplanar... 

R. Cingolani, Optical Properties of Excitons in ZnSe-Based Quantum Well Heterostructures A. Ishihashi and A. V. Nurmikko, II-VI Diode Lasers A Current View of Device Performance... 

Interfaces are of critical importance in determining the electronic and optical properties of quantum well heterostructures. It is necessary to... 

Fig. 7.30. Photoluminescence spectra (2K) of PLD MgZnO-ZnO-MgZnO quantum well heterostructures on sapphire with nominal thickness of the ZnO quantum well of 25, 12, 6, and 3nm [53]. The blueshift of the excitonic peak combined with the intensity enhancement is a clear indication of optical confinement in the ZnO layer...

It has been proposed recently that phase separation of GalnN into In-rich and Ga-rich phases has profound consequences on the optical properties and on the lasing properties of GalnN/GaN/AlGaN quantum well heterostructures [1,2]. The nanoscale compositional fluctuations resulting from phase separation are believed to lead not only to exciton localisation [2] but even to a quantum-dot-like behaviour [3], A more detailed discussion of the microscopic aspects of phase separation is given elsewhere in this volume. 

E. Kapon, Lateral Patterning of Quantum Well Heterostructures by Growth of Nonplanar Substrates H. Temkin, D. Gershoni, andM. Panish, Optical Properties of Gai xInxAs/InP Quantum Wells... 

R. Cingolani, Optical Properties of Excitons in ZnSe-Based Quantum Well Heterostructures... 

FlG. 13.8. Schematic and optical properties of the hybrid quantum-well/nanocrystal structure, (a). The structure consists of an InGaN/GaN quantum-well heterostructure with a monolayer of TOPO/TOP-capped CdSe/ZnS core/shell nanocrystals on top of it. Electron-hole pairs in the quantum well can experience nonradiative resonant transfer into nanocrystals. The nanocrystals excited by energy transfer produce emission with a wavelength determined by the nanocrystal size. (b). The emission of the quantum well (blue) spectrally overlaps with the absorption of the nanocrystals (green). For CdSe nanocrystals with 1.9 nm radius, the emission wavelength is around 575 nm (red) (from (13)). 

EXCITON-PHONON COUPLING OF LOCALIZED QUASI-2D EXCITONS IN SEMICONDUCTOR QUANTUM WELL HETEROSTRUCTURES... 

InGaN/GaN QUANTUM WELL HETEROSTRUCTURES GROWN ON SILICON FOR UV-BLUE LASERS AND LIGHT EMITTING DIODES... 

Click, M., Reinhart, F. K., and Martin, D., Linear electro-optic effect comparison of GaAs/AlGaAs multi-quantum-well heterostructures with an AlGaAs solid solution at 1.1523 pm, J. Appl. Phys., 63, 5877 (1988). 

Kish FA, Hsieh KC, Major JS Jr, Sugg AR, Plano WE, Baker JE, Holonyak N Jr (1990) Si incorporation in laser-melted Al Gai. As-GaAs quantum well heterostructures from a dielectric source. J ApplPhys 68 6174-6178. doi 10.1063/l.346907... 

I., Vertikov, A., Nurmikko, A.V., Carter-Coman, C., Kern, R.S., Kish, F.A. and Krames, M.R. (1999) A vertical cavity light emitting InGaN quantum well heterostructure. Applied Physics Letters, 74, 3441. 

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