Multi-quantum well

Fig. 12.7 InGaAsP/InP multi quantum well semiconductor structure process (a) Si02 etch mask deposition (b) PMMA spin coating (c) E beam lithography and develop (d) Si02 etch (e) PMMA stripping (f) InGaAsP membrane etch (g) Si02 stripping (h) Chip flipping and bonding to sapphire (i) InP substrate etch (j) Adhesive etch...

I. Harrison. Impurity-induced disordering in III-V multi-quantum wells and superlattices// J.Mater.Sci. Mater.Electron.- 1993.- V.4, No.l - P.1-28. 

Chichibu et al [20,23] and Narukawa and co-workers [21,22] observed a large Stokes shift between the absoiption and emission energies of the InGaN quantum energy levels, using the photovoltage (PV) method, on the InGaN SQW LEDs and multi-quantum-well (MQW) structure LDs. 

C3.2 Toyoda Gosei GaN LEDs D GalnN/GaN MULTI-QUANTUM WELL STRUCTURE... 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, InGaN-based multi-quantum-well-structure laser Diodes, Japan J. Appl. Phys. II 35 L74-L81 (1996). 

Click, M., Reinhart, F. K., and Martin, D., Linear electro-optic effect comparison of GaAs/AlGaAs multi-quantum-well heterostructures with an AlGaAs solid solution at 1.1523 pm, J. Appl. Phys., 63, 5877 (1988). 

N. Gao, K. Huang, J. li, S. li, X. Yang, J. Kang, Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells. Sci. Rep. 2, 816 (2012)... 

Nakamura et al. (40) grew two kinds of Ino,22Gao.78N/Ino.o6Gao.94N multi-quantum-well (MQW) structures on GaN Aims. One was MQW-100, in which the thicknesses of both barrier (Lb) and well layers (Lw) were 100 A (Lb = Lw = 100 A) and the number of periods was 10. The other was MQW-30, in which the thicknesses of barrier and well layers were 30 A (Lb = Lw = 30 A) and the number of periods was 20. Figure 30 shows the XRC for (0002) diffraction from In Ga(i f N/InyGa(i )N MQW structures grown on GaN films. Curve (a) represents MQW-100 and curve (b) MQW-30. Both curves clearly show three peaks, which are the (0002) peak of the X-ray diffraction of GaN, a zeroth-order peak marked 0, and satellite peak marked -1 associated with the MQW structures. The FWHMs of the zeroth-order peak and GaN underlayer peak were 7.1 and 5.4 min for MQW-100, and 6.3 and 4.3 min for MQW-30. 

Variations on the quantum well design include use of strained layer structures, in which the lattice of the narrow-gap material is distorted in the plane of the structure (see Chapters 7 and 10) barrier structures, where there is an additional potential barrier that improves injected carrier trapping in the well and multi quantum well structures with several wells in the active region. 

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