Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

InGaAs quantum dots

Volume 60 Seif-Assembled InGaAs/GaAs Quantum Dots... [Pg.306]

Hoglund, L., Petrini, E., Asplund, C. et al. (2006) Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy. Applied Surface Science, 252(15), 5525-29. [Pg.62]

Mukai K., Ohtsuka N., Shoji H. and Sugawara M. (1996), Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection inflnence of phonon bottleneck , Appl. Phys. Lett. 68, 3013-3015. [Pg.202]

Mukai K. and Sngawara M. (1998), Slow carrier relaxation among snblevels in annealed self-formed InGaAs/GaAs quantum dots , Jpn. J. Appl. Phys. 37, 5451-5456. [Pg.202]

Mukai K. and Sngawara M. (1999), The phonon bottleneck effect in qnantnm dots , in Sngawara M., ed., Self-Assembled InGaAs/GaAs Quantum Dots, Academic Press, San Diego, p. 209. [Pg.202]

INTRADOT CARRIER RELAXATION IN RADIATION-DAMAGED InGaAs/GaAs QUANTUM DOT HETEROSTRUCTURES... [Pg.111]

The influence of high-energy (2.4 MeV) proton irradiation on the photoluminescence (PL), PL excitation and time-resolved PL spectra of InGaAs/GaAs quantum dots (QDs) is reported. The effect of irradiation on the PLE spectra is mainly attributed to a Fermi level shift towards the center of the gap. TRPL measurements show an evidence of carrier tunneling out of the excited QD states to adjacent defects. The ground level remains unaffected by the defects, at least up to a certain dose. Our considerations show that the dots very probably expulse radiation defects. [Pg.111]

Y. Okada, M. Miyagi, K. Akahane, Y. luchi, and M. Kawabe, Self-orgaiiized InGaAs quantum dots on GaAs (311)B studied by conductive atomic force microscope tip, J. App. Phys., 90, 192 196 (2001). [Pg.408]

Kitamura M, Nishioka M, Oshinowo J, Arakawa Y. In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition. Appl Phys Lett 1995 66 3663-5. [Pg.22]

Awano, Y.et al. 2001. Temperature controlled RTS noise from a single InGaAs quantum dot, Proc. of the hit. Conf. "Noise in Physical Systems and 1/f Fluctuations", Gainesville, FL, USA (2001) p. 359... [Pg.1833]


See other pages where InGaAs quantum dots is mentioned: [Pg.306]    [Pg.695]    [Pg.695]    [Pg.194]    [Pg.696]    [Pg.477]    [Pg.111]    [Pg.11]    [Pg.7]    [Pg.1829]    [Pg.23]    [Pg.93]    [Pg.93]    [Pg.231]    [Pg.368]    [Pg.368]   
See also in sourсe #XX -- [ Pg.695 ]

See also in sourсe #XX -- [ Pg.174 ]




SEARCH



InGaAs

Quantum dot

© 2024 chempedia.info