PS-CVD

The material properties of PS offer new ways of making electronic devices. For the manufacture of cold cathodes, for example, oxidized microporous polysilicon has been found to be a promising material. The application of basic semiconductor processing steps such as doping, oxidation and CVD to a macroporous material enable us to fabricate silicon-based capacitors of high specific capacitance. Both devices will be discussed below. 

Figure 3.14 (a) SEM images for single-walled carbon nanotubes (SWCNT) synthesized by chemical vapor deposition (CVD) with iron-rich ceramic particles derived from patterned PS-fc-PFF.MS islands as catalyst. (From Lu et al.57 Reproduced with permission.) (b) Schematic and AFM height image (11 pm2) of high-throughput field-effect transistors (FETs) from SWCNTs afforded from pyrolyzed PS- -PFEMS films. (From Lastella et al.59 Reproduced with permission.)... 

Introduction of filling materials into pores or the deposition on the PS surface is the result of the interaction between the PS and the different technological environments (ion beams, gaseous or liquid). The most frequently used techniques are electrochemical or chemical treatment. Their main advantages are the possibility to deposit materials inside pores, the simplicity of the equipment and the low cost of the process [2]. Other methods such as ion implantation, CVD techniques. 

Figure 16. The amount of the 3T3 cells measured from absorbance of MTT test after adhesion (1st day) and proliferation (3rd and 5th day) on pristine PET and carbon layers on PET prepared by evaporation, sputtering and CVD method. The layers have comparable thickness (approx. 80 nm). The amount was calculated in respect to the tissue PS.

Wear testing plasma sprayed chrome oxide-silica, plasma sprayed PS 212 or mid-temperature CVD Ti(C,N) rub shoes against a CVD CrN disk at 350 C, lubricated, produced very high friction coefficients (0.17-0.21). The high friction coefficients caused high CrN wear rates and for this reason, only one of these material pairs was tested for over 30 minutes before the wear track had completely worn through the 2 to 3 micron thick CrN coaLing. 

Shaffer and Koziol followed the same route to graft polystyrene (PS) onto the walls of MWCNTs, synthesized by a CVD technique... 

The iron-rich ceramics from films PS-6-PFS function as catalysts for the growth of single-walled carbon nanotubes (SWCNT). Typically, thin films were self-assembled and treated with UV-ozone to remove organic materials and subsequently used for the simple one-step chemical vapor deposition (CVD) growth of SWCNTs. The resulting SWCNTs were characterized by... 

CNT Carbon nanotubes CVD Chemical vapor deposition DRIE Deep reactive ion etching EBL Electron beam hthography LbL Layer-by-layer self-assembly PANI Polyanihne PDMS Polydimethylsil oxane PS Polystyrene PVA poly(vinyl alcohol)... 

Figure 14.18 demonstrates the calculated equilibrium total pressure of SiO and CO vapors at the SiC/Si02 interface." The equilibrium states at the SiC/Si02 interface can be expressed as either point A in Fig. 14.13 (SiC/C/ Si02 equilibrium, ac = 1), point B (SiC/Si/Si02 equilibrium, = 1) or point C (SiC/Si02 equilibrium with the stoichiometric gas composition of Ps o = 3Pco)- Ths vapor pressure at a = 1 (point A) is the highest, more than 10 Pa at 1800 K. The vapor pressure exceeds 10 Pa at points B and C at more than 2000 K. On the other hand, the bubble formation temperature of CVD SiC was experimentally determined to be around 1950 K, indicating that the...

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