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Protective film planarizing

Schematic illustration of flexible metal mirror design. Sol-gel coatings serve several protective roles the planarization layer prevents galvanic corrosion of the Fe-Ag couple in humid environments the protective film prevents abrasion or corrosion of the underlying silver reflective surface. From Ashley and Reed (71,72). Schematic illustration of flexible metal mirror design. Sol-gel coatings serve several protective roles the planarization layer prevents galvanic corrosion of the Fe-Ag couple in humid environments the protective film prevents abrasion or corrosion of the underlying silver reflective surface. From Ashley and Reed (71,72).
Thin films (qv) of vitreous silica have been used extensively in semiconductor technology. These serve as insulating layers between conductor stripes and a semiconductor surface in integrated circuits, and as a surface passivation material in planar diodes, transistors, and injection lasers. They are also used for diffusion masking, as etchant surfaces, and for encapsulation and protection of completed electronic devices. Thin films serve an important function in multilayer conductor insulation technology where a variety of conducting paths are deposited in overlay patterns and insulating layers are required for separation. [Pg.512]

In a computer hard drive, the data are stored on one or more rigid disks coated with magnetic materials. The magnetic film is coated on a planar NiP substrate. NiP film is typically electroplated on an aluminum disk. Before the coating process, the NiP must be planarized. The planarization process is similar to oxide ILD CMP except that the material is a metal. The slurry chemistry is similar to copper or tungsten CMP except that the end point is to form a perfectly planar substrate. Hydrogen peroxide can be used as an oxidizer in NiP CMP as stated in the patent by Jia and coworkers [14,15]. As shown in Fig. 7.5, the removal rate for NiP film follows the same trend as for copper. At higher concentration, the removal rate decreases because of the formation of a native protective NiO film [12]. [Pg.206]

Owing to the fact that free ferric ions are stable only in the acidic regime (Fig. 7.8), most slurries using ferric ions as an oxidizer are formulated at pH substantially below 4. At such a low pH, the copper surface oxidized via the reaction described in Equation 7.7 will not form any native oxide film. Without the protection from such an oxide, the copper surface is prone to corrode, which results in high static etch rate and practically no planarization efficiency. To provide a balance, therefore, the presence of a corrosion inhibitor is a must for copper CMP slurry. [Pg.210]


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See also in sourсe #XX -- [ Pg.848 , Pg.849 ]




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Planar Films

Protective films

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