Properties of Charge Carriers

The following table presents values for the carrier concentration n calculated from lattice constants assuming that n is equal to the number of rare earth ions per cm of the compound, carrier concentration nn calculated from the Hall effect (for M Se by the formula for the one-band model), effective mass mVmo of current carriers estimated from the position of the Fermi level and n, drift mobility and Hall mobility i (n and nn both in cm and hh both in cm --s )  

YbSe 4x10 M2] Hole mobility. Gmelin Handbook RE Main Vol. C9 0.3 ) [2] 

For LaSe, m /mo = 2.9 from the heat capacity (y = 10.5x 10 cal-mor -K ), was calculated by use of the free-electron model, Tikhonov et al. [22], whereas m /mo = 6.6 was derived from the susceptibility of the electron gas, Adamyan et al. [23]. Analysis of the reflection spectra of single crystals (c), sintered samples (s), powders (p), dispersed powders (d.p.), and films (f) gave the following values for mVmo and the mobility (in cm -V -s )  

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The fabrication of active semiconductor devices from amorphous semiconductor films is a further application that offers considerable advantages. Thin-fihn transistors, based on amorphous films of hydrogenated silicon, are nnder intensive development. Other devices with monostable and bistable switching characteristics have also received considerable interest. Naturally enough, the performance of snch devices is intimately related to the transport properties of charge carriers in the materials employed. 

Relaxation and dynamics properties of charge carriers depend not only on the polymer stmcture, but also on its doping level. The temperature dependence of effective Did aod D3D calculated from Eqs. 10 for PC in PTTF samples with different structure and iodine content are shown in Fig. The Did parameter increases... 

Chapter three Transport Properties of Charge Carriers... 

The present book is organized as follows. The first chapter describes the relevant physical and chemical background. In Chapter 2, the main measurement methods are discussed, with the results of the elementary transport properties of charge carriers given in Chapter 3. Chapters 4 and 5 treat photo- and radiation-induced... 

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