Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching

Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching 

1 Chemistry Division, C-ADI, MS ]565, Los Alamos National Laboratory, Los Alamos, NM 87545, USA 

2Department of Chemistry, University of Central Florida, 4000 Central Florida Blvd, Orlando, FL 32816, USA 3 Department of Chemical and Biomolecular Engineering and Department of Chemistry, University of Notre Dame, Notre Dame, 

GaN is a wide band gap semiconductor (Eg = 3.4 eV) of considerable technological interest. Light-emitting diodes (LEDs) and laser diodes based on GaN and its alloys of either In or A1 have been successfully commercialized for some time. GaN remains a topic of intense interest, and current research primarily focuses on creating more efficient green and red LEDs and laser diodes for solid state lighting and other applications. 

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd 

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