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Postexposure thermal processing

Unlike DNQ—novolac resists, CA-resist imaging characteristics are determined to a significant extent by thermally activated bimolecular chemistry taking place during postexposure processing. Since the polymer serves here as the reaction medium, its properties and state induence the course and... [Pg.130]

Postexposure bake of the wafer. A postexposure bake (PEB) improves contrast of the photoresist before its development. The PEB process causes three effects 1) diffusion of the PAC 2) solvent evaporation and 3) thermally induced chemical reactions. In general, the dissolution rate of a resist decreases as a function of a PEB temperature. PEB becomes more important for the photoresists with a chemical amplification (CA) feature. The photoresists need the PEB to complete chemical reactions initiated by exposure. [Pg.2112]

See other pages where Postexposure thermal processing is mentioned: [Pg.5]    [Pg.5]    [Pg.137]    [Pg.5]    [Pg.676]    [Pg.381]    [Pg.491]    [Pg.262]    [Pg.264]   
See also in sourсe #XX -- [ Pg.5 ]



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