Post-bake procedure

The cleaned and silanized substrates were selectively patterned by photolithography using an electrically insulating photoresist [49]. A thin SU-8 2000.5 photoresist layer was spun at 6,000 rpm, soft-baked, exposed using a MJB4 mask aligner (60-80 mJcm ), post-baked, and developed in PGMEA for 30 s [49]. The applied soft and post-bake procedure was as follows 1 min at 65 °C, 1 min at 92 °C, and 1 min at 65 °C. 

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