Position histogram

For the analysis, we developed a new method that makes it possible to observe correlated potentials between two trapped particles. The principle is shown in Figure 7.5. From the recorded position fluctuations of individual particles (indicated by the subscripts 1 and 2), histograms are obtained as a function of the three-dimensional position. Since the particle motion is caused by thermal energy, the three-dimensional potential proflle can be determined from the position histogram by a simple logarithmic transformation of the Boltzmarm distribution. Similarly, the... 

Off-line analysis of stored data review of the stored data, organize data in different presentation windows, plot AE and plant parameters data so as to enable comparison and coirelation with the possibility to present data (histogram of AE events vs position, plant parameters and/or AE parameters vs time) conditioned in terms of time interval (initial time, final time) and/or position interval (defined portion of the component = initial coordinate, final coordinate) and/or plant parameters intervals (one or more plant parameters = initial value, final value). 

Fig.5 Example of histogram presentatioa The lower picture is a schematic representation of the monitored component with Uie position of the transducers (1-4). The higher window is the total AE counts vs linear location representation of the located AE sources...

Current histogram of cumulated AE events vs axial position, for each monitored component. 

Figure 6 shows the histogram of localized AE events vs axial position for the same time period as in fig.5. The location of the AE source corresponds, within source location errors (< 10-15 cm), to one of the welds under surveillance. The weld was known by ultrasonic examination to be affected by internal discontinuities. However, the position of the source could also correspond to one of the hangers. The steps observed in EA event accumulation have taken place during steady load operation, which normally corresponds to very low background noise conditions. This type of event, however, has not been observed afterwards. 

Localized AE sources appear during load variations, startups or shutdowns, but their positions are uniformly spread over the length of the two bodies of the header this can be seen from the histogram of the localized AE events for the front body (fig.S) and for the rear body (fig.9). 

Figure 8 VIGRAL process results top left - amplitude tuid ToF vs. position plot top right - source histogram lower right the V-scan image lower left -specimen location and dimensions.

Table 4.2 Analysis of histogram data for SAE 1018 to obtain the Normal distribution plotting positions...

Figure 3. Histograms of the spectra of positively charged ions in C2H1 at four different gas pressures...

Fig. 55—Temperature calculation for different liquid films (glycerin and hexadecane) at different locations in the contact region Area A is the central area in the inset photo and area B is the edge area. The filled histogram represents the positive EEF intensity of 518.6 kV/cm, and the empty one of 667.7 V/cm. The solid (glycerin) and dotted (hexadecane) lines are variation curves of the boiling point along the radial direction in the contact region.

Since the histogram gives a probability density function of the particle position, the correlation in the velocities Vy and V2j in the j-direction causes the change in the shape of the histogram plotted against Vy and V2j, due to the different coefficient y — Pj in... 

Fig. 10 Two-dimensional (2D) histograms (plateau scattering vs position) at various electrode potentials for Au(l 11) in 0.1 M H2SO4. The statistical analysis is based on 2D bins...

A closer inspection of the predominant peak in the conductance histogram at G0 (=77.5 pS) reveals that its position and magnitude depend on the applied electrode potential, as well as on the strength of anion adsorption (Fig. 11). The peak position shifts in the presence of weakly specifically adsorbed ions (e.g., C104-, SO)2 ) to value smaller than G0. 

Figure 17a shows, as an example, the plateau data-point histograms of T3 at three bias voltages. Each histogram, constructed from more than 1,000 individual traces, reveals a distinct maximum. The peak positions from individual experiments are very reproducible for low bias voltages Vbias < 0-30 V. The broad asymmetric tail region toward higher conductance values is attributed to contributions from... 

Figure 19b displays the 2D histogram of the experimentally obtained conductance of N4 plotted vs distance [63]. The distance scale z is normalized with respect to z = 0 at G = 0.7 G0, to a common point. The chosen procedure is justified, because of the steep decay of the tunneling current after breaking of the last atomic contact. The histogram counts the occurrence of [log(G/Go), z ] pairs in a 2D field. Figure 19b exhibits the features of gold quantum contacts at G > Go, and a second cloud-like pattern in [10 5 10 4 G0, 0 0.5 nm]. We attribute the latter to the formation of single-molecule junctions of only one type. The center of the cloud is located at G = 3.5 4.5 x 10 5 Go, close to the peak position in the ID histogram (Fig. 19a). The extension of the cloud along the distance scale is around 0.5 nm, close to the typical length of the plateaus (the inset of Fig. 19a).

Fig. 26 (a) Structures of pyridine-, terpyridine-, and thiol-terminated PBI derivatives with different substituents at the bay positions X and X . The inset illustrates the alternation of optical properties of the PBIs with different bay-area substituents, (b) Plateau data-point histogram of Py-PBI in a mixture of mesitylene/THF (4 1). bias = 0.1 V, tip retraction rate was 60 nm s-1. The inset show the bias voltage dependence of the current through a molecular junction... 

Fig. 18.14 LC ARROW analysis based on radiation pressure, (a) Time dependent microbead position for extraction of waveguide loss (symbols data, line fit) (b) lateral mode profile determination (bars histogram of measured lateral particle position, line, multimode profile calculated with commercial mode solver...

Figure 3.17. Interatomic distances in CsCI. The distances are given for the CsCI compound (cubic, cP2-CsCl type, a = 411.3 pm) with Cs and Cl in the representative positions 0, 0, 0, and A, A, A respectively, white and black atoms in Fig. 3.8. In the tables the first two groups of distances (in pm) are given as positions of each atom around the reference atom. Notice that not only atoms in the reference cell but also those in the adjacent cells must be considered (see Figs. 3.8 (d)-(f)). At the right side, the corresponding histograms using the reduced distances d/dmm are shown the first two bars summarize the data contained in the table.

Fig. 2.3 Evidence of monolayer graphene from TEM [72]. (a) and (b) High-resolution TEM images of solution-cast monolayer (a) and bilayer (b) graphene (scale bar 500 nm) (c) electron diffraction pattern of the sheet in (a), with the peaks labeled by Miller-Bravais indices (d) and (e) electron diffraction patterns taken from the positions of the black (d) and white spots (e), respectively, of the sheet shown in (b), using the same labels as in (c). fhe graphene is clearly one layer thick in (d) and two layers thick in (e) (f)-(h) Diffracted intensity taken along the 1210 to 2110 axis for the patterns shown in (c)-(e), respectively (i) Histogram of the ratios of the intensity of the 1100 and 2110 diffraction peaks for all the diffraction patterns collected. A ratio > 1 is a signature of graphene.

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