Polystyrene lattices layer

This lattice model was found to provide an excellent representation of experimental XPS data over a wide range of blend compositions and molecular weights when an end-fluorinated polystyrene was used as additive [53]. Thus, a surface enrichment of the low-energy end groups is confined to the first lattice layer. Interestingly, the second layer shows maximum depletion of functional group... 

Fig. 4 A Atomic force microscope (AFM) images, projected at 30° for viewing, of non-treated dithiocarbamated polymer film surface (a) and the PST(polystyrene)-grafted surface by UV irradiation through the lattice-patterned projection mask for 5 (fc), 10 (c), and 20 min (d). B Relationship between the average thickness of the PST-grafted layers and UV irradiation time...

To be sure, the figure depicts the structures observed for polystyrene-6Zocfc-polyisoprene, but these are quite typical. Spherical, cylindrical and layer-like domains are generally observed in all block copolymers. Less is known about how general special types like the OBDD lattices are. Observations are rare, since these exist in small regions only, positioned in-between the extended stability ranges of the major structures. 

The thickness of the SIP is expected to be a function of the dielectric constant of the substrate. This fact is established by studies done on thin films of pentacene and polystyrene [15, 39, 40]. In our scenario, this theory does not apply, as the SIP is observed on Si/SiOx substrates (composed of a thin SiOx layer of 2 nm on top of silicon) having a dielectric constant of e = 11.9 as also on glass (Si02), PVP and AlOx with a dielectric constant of s = 3.9, 5.0 and 9.9, respectively. On the top, the substrate-induced phase exists in contact with air or a sacrificial layer, and the bulk phase. The rectangular lattice of the bulk DLC-phase is incommensurable with the tetragonal phase of the SIP. The substrate-induced phase thus forms regardless of the thickness and the structure of the bulk phase as a function of time due to nucleation events initiated by the solid substrate. 

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