Polymer patterns, deep

Figure 7. Deep UV polymer patterns obtained with a matrix resist of poly(2-methyl-l-pentene sulfone) and Varcum resin positive tone images on the left and negative tone images on the right.

Sci. in press). In these studies, the PIQ (2.0 ym thick) was used as an underlayer. Thus, the film consisting of the polymer 11 and PIQ prepared on a silicon wafer was exposed to deep UV-light with the use of Canon contact aligner PLA-521 through a photomask for 5 to 6 s (UV intensity 72 mV/cm2 at 254 nm). The resulting film was then developed with a 1 5 mixture of toluene and isopropyl alcohol for 15 s and rinsed with isopropyl alcohol for 15 s. A positive resist pattern was obtained after treatment of the film pattern with 02 RIE under the condition of 0.64 W/cm2 (RF power 7 MHz, 02 pressure 3 mtorr). 

Knoll and coworkers were the first to synthesize polymer brushes from SAM-coated silicon wafers via a photoinitiation strategy [37-39]. They used an AIBN type initiator that was developed by Riihe. In particular, a chlorosi-lane terminus was used to form a covalent bond to the native oxide surface of the silicon this was followed by irradiation at 350 nm in the presence of styrene to yield a PS brush (Fig. 4). They were able to write patterns by irradiating through a mask to activate the surface-bound initiators. Alternatively, they synthesized a polymer film and then used deep UV ablation through masks to remove some of the polymer in the irradiated regions. By... 

The bilayer scheme was successfully demonstrated with lightly brominated poly(TMSP) (—10% Br). In these experiments, a 3000-A layer of the brominated polymer was deposited on top of 1.5 (xm of polyimide or novolac planarizing layers. The wafer was exposed to 25 mj/cm of deep-UV radiation and heated for 1 h at 140 °C. The pattern was developed in... 

Yoshimura, H. Shiraishi, J. Yamamoto, and S. Okazaki, Correlation of nano edge roughness in resist patterns with base pol3nners, Jpn. J. Appl. Phys. 32, 6065 (1993) T. Itani, H. Yoshino, S. Hashimoto, M. Yamama, N. Samoto, and K. Kasama, Polymer structure effects on dissolution characteristics and acid diffusion in chemically amphfied deep ultratviolet resists, J. Vac. Sci. Technol. B. 15(6), 2541 (1997). 

CD bands for DP 1000 did not form a normal pattern. These results suggest that the high polymer complex possesses the deep bluing species in the aggregate of the amylose helices. The asymmetric shallowing of the CD bands can be ascribed to the increase of the foregoing exclton-coupled interactions as discussed in the previous section. 

IPN is due to partial reconstruction of the polymer surface. It is interesting to explore how deep in the film the surface modification is propagated. We have observed that the IPN surface pattern can be altered by modifying the substrate... 

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