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Polymer light-emitting diode performance

S.A. Carter, M. Angelopoulos, S. Karg, P.J. Brock, and J.C. Scott, Polymeric anodes for improved polymer light-emitting diode performance, Appl. Phys. Lett., 70 2067-2069, 1997. [Pg.262]

M.M. Alam, and S.A. Jenekhe, Polybenzobisazoles as efficient electron-transport materials for improving the performance and stability of polymer light-emitting diodes, Chem. Mater., 14 4775-4780, 2002. [Pg.263]

L. Ding, F.E. Karasz, Z. Lin, M. Zheng, L. Liao, and Y. Pang, Effect of Forster energy transfer and hole transport layer on performance of polymer light-emitting diodes, Macromolecules, 34 9183-9188,2001. [Pg.268]

X. Gong, D. Moses, A.J. Heeger, S. Liu, and A.K.-Y. Jen, High-performance polymer light-emitting diodes fabricated with a polymer hole injection layer, Appl. Phys. Lett., 83 183-185 (2003). [Pg.400]

Y Noh, C Lee, J Kim, and K Yase, Energy transfer and device performance in phosphorescent dye doped polymer light emitting diodes, J. Chem. Phys., 118 2853-2864, 2003. [Pg.447]

The aim of this chapter is to present a simple but general band structure picture of the metal-semiconductor interface and compare that with the characteristics of the metal-conjugated polymer interface. The discussion is focused on the polymer light emitting diode (LED) for which the metal-polymer contacts play a central role in the performance of the device. The metal-polymer interface also applies to other polymer electronic devices that have been fabricated, e.g., the thin-film field-effect transistor3, but the role of the metal-polymer interface is much less cruical in this case and... [Pg.64]

J. Liu, Y. Shi, L. Ma, Y. Yang, Device performance and polymer morphology in polymer light emitting diodes The control of device electrical properties and metal/polymer contact, J. Appl. Phys. 88 (2000) 605-609. [Pg.162]

Keywords Device performance Electron-transport moiety Hole-transport moiety Polyfluorenes Polymer light-emitting diode... [Pg.50]

Subsequently, Cao et al. [30,31] designed and synthesized polymer 20-22 by similar method and the highly efficient saturated red-phosphorescent polymer light-emitting diodes (PLEDs) were achieved on the basis of copolymer 20. The best device performances are observed with an external quantum efficiency of 6.5% photon/electron (ph/el) at the current density of 38 mA/cm2, with the emission peak at 630 nm (x = 0.65, y = 0.31) and the luminance of 926 cd/m2. [Pg.131]

Deeper insight into CNT functionalities when used as a dopant for polymer solar cells and polymer light-emitting diodes (PLEDs) was presented by Xu et al. [329]. While the PLED gained from rather low CNT doping levels of about 0.02%, the solar cell performance increased further up to 0.2 wt %. The improved EQE of the OLED was explained by a better charge carrier injection from the electrode, whereas for the solar cell exciton dissociation is facilitated by the nanotubes [329]. [Pg.66]

T. -F. Guo et al., High performance polymer light-emitting diodes fabricated by a low temperature lamination process, Adv. Funct. Mater., 11, 339, 2001. [Pg.486]

F. C. Chen, Y. Yang, M. E. Thompson, and J. Kido. High-performance polymer light-emitting diodes doped with a red phosphorescent iridium complex. . dpp/. Phys. Lett., 80(13) 2308-2310, April 2002. [Pg.62]

G. Wantz, L. Hirsch, N. Huby, L. Vignau, J. F. Silvain, A. S. Barriere, and J. P. Pameix. Correlation between the indium tin oxide morphology and the performances of polymer light-emitting diodes. Thin Solid Films, 485 (l-2) 247-251, August 2005. [Pg.128]

The electroluminescent performance of single-layer polymer light-emitting diodes with their emissive layer of PVK and electron transporting molecules of iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,C ]-picolinate has been investigated [84]. [Pg.15]

Bharathan, J.M., and Y. Yang. 1998. Polymer/metal interfaces and the performance of polymer light-emitting diodes. / Appl Phys 84 3207-3211. [Pg.835]


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