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Polyferrocenylsilanes as UV Photoresists

To study this possibility, a thin film (ca. 200 nm) of Co-PFS on Si substrate was exposed to near UV radiation (k = 350-400 nm, 450 W) for 5 min. The exposed film was developed in THF before characterization. Co-PFS was found to be a negative-tone photoresist. This appears to be consistent with photo-initiated crosslinking mechanism of acetylenes in the presence of metal carbonyls. However, it is also possible to have crossUnking in Co-PFS as a result of decarbonylation of the Co-cluster. The thickness of the film before and after UV treatment was determined by eUip-sometry. A 200-nm-thick film of Co-PFS had a thickness of ca. 170 nm after expo-sme to UV radiation and solvent development. The decrease in thickness is probably a reflection of the decreased volmne of the polymer upon crosslinking. [Pg.55]

Patterned Co-PFS was pyrolyzed at 900°C under an N2 atmosphere in attempt to fabricate magnetic ceramic fines. The resulting ceramic fines have the same dimensions as the polymer precursor, showing excellent shape retention in the lateral directions. Inspection of the ceramic line at higher magnifications revealed the formation of what appeared to be Co/Fe nanoparticles throughout the fine. [Pg.55]

would like to thank the Canadian Government for a Canadian Research Chair. S.B.C. is grateful to NSERC for a PDF. The authors would also like to acknowledge the excellent work of our collaborators EBL Prof Harry E. Ruda Dr. Stephane Aouba (Center of Advanced Nanotechnology, University of Toronto) AFM/MFM  [Pg.56]

Berenbaum, M. Ginzbtug-Margau, N. Coombs A. J. Lough, A. Safa-Safat, J. E. Greedan, G. A. Ozin, I. Manners, Adv. Mater. 15, 51 (2003). [Pg.57]

Microlithography, Marcel Dekker, New York, 1998. [Pg.57]


See other pages where Polyferrocenylsilanes as UV Photoresists is mentioned: [Pg.49]    [Pg.55]    [Pg.55]   


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