Poly photoluminescence decay

Whereas in solution the photoluminescence efficiency (Of) of poly(3-alkylthiophenes) (PATs) is 3(Mf)%, it drastically drops to 1-4% and lower in the solid state due to the increased contribution of nonradiative decay via interchain interactions and ISC caused by the heavy-atom effect of sulfur (97MM4608). Optoelectronic devices of this type of compounds have been studied (98SCI(280)1741 06SM(156)1241). Fibers of poly(3-hex-ylthiophene) for photovoltaic applications have been described (07MI1377). Poly(3-octylthiophene) showed a TTA band at 800 nm (96JPC15309). The photophysical properties of some alkyl and aryl polythiophenes have been studied (03JCP(118)1550). The absorption maximum of poly(3-octylthiophene) is at 438 nm, while the fluorescence was... 

Long-lived photoluminescence, at 826 nm, is reported (t 15 (is) for thin films of the processable, -conjugated polymer, poly(3-hexylthio-phene) (93JA8447). Excitation of the n—n transition with 518 nm light (So >S ) yields only very weak luminescence of 826-nm light, even at 18 K. The emission is enhanced, to point where it can be observed at room temperature, when the excitation wavelength is 250 nm, but it is completely quenched by oxygen. Prompt fluorescence decays within... 

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