Poly dopant profile

Keeping abrupt profiles of dopants is also required to apply the FLA technique to solar cell fabrication process. Figure 11.8 shows secondary ion mass spectroscopy (SIMS) profiles of Cr and P atoms in the bottom layers and of B in the surface doping layer of p-i-n Si stacked films before and after FLA, the structure of which is also schematically shown [34]. The abrupt profiles of the surface B atoms as well as of the bottom Cr and P atoms are maintained after FLA, which results from millisecond-order rapid annealing, and shows the possibility of immediate formation of p-i—n poly-Si structure with only one irradiation of flash lamp for p-i-n stacked a-Si layers. 

As an example of RBS applied to a polymer system, figure 3.22 shows the spectrum obtained from a sample of the conjugated polymer poly(phenylene, vinylene) after exposure to arsenic pentafluoride vapour (Masse et al. 1990). This dopant diffuses into the polymer and reacts with it to form an electrically conducting complex and RBS is well suited to following the kinetics of the doping process by providing concentration-depth profiles of the elemental components of the dopant as a function of time. The peaks in the spectrum... 

Figure 9 Refractive index profiles of Gl POFs prepared with various amounts of radical initiator added to the core solution. In the experiment, poly(2,2,2-trifluoroethyl methacrylate), benzyl benzoate, and fert-butyl peroxy-2-ethylhexanoate were utilized as the base polymer, dopant, and initiator, respectively. Adapted with permission from Koike, K. Koike, Y. J. Lightw. Technol. 2009, 27,41 2009 IEEE.

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