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Plasma unbalanced magnetron

The introduction of unbalanced magnetron sputtering, in which part of the argon plasma can impinge on the substrate, allows ion bombardment of the coating as it forms. The use of ion-beam assisted deposition can be used concurrently or sequentially. This technique is described separately later in the chapter. [Pg.156]


See other pages where Plasma unbalanced magnetron is mentioned: [Pg.519]    [Pg.519]    [Pg.148]    [Pg.519]    [Pg.519]    [Pg.193]    [Pg.174]    [Pg.167]    [Pg.940]    [Pg.707]    [Pg.175]    [Pg.251]    [Pg.251]    [Pg.259]    [Pg.265]    [Pg.312]    [Pg.313]    [Pg.719]    [Pg.73]   
See also in sourсe #XX -- [ Pg.175 ]




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Magnetron

Unbalanced

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