Planar defects microtwins

Similar to PbSe, the controlled growth of lead telluride, PbTe, on (111) InP was demonstrated from aqueous, acidic solutions of Pb(II) and Cd(II) nitrate salts and tellurite, at room temperature [13]. The poor epitaxy observed, due to the presence of polycrystalline material, was attributed to the existence of a large lattice mismatch between PbTe and InP (9%) compared to the PbSe/InP system (4.4%). The characterization techniques revealed the absence of planar defects in the PbTe structure, like stacking faults or microtwins, in contrast to II-VI chalcogenides like CdSe. This was related to electronic and structural anomalies. 

Crystals deformed at a constant strain-rate (e = 10 s ) with a confining pressure of 300 MPa and 400 C in an orientation expected to activate the (100) [010] slip system, developed numerous microtwins in (100) and some dislocations that were not fully characterized. However, interesting dislocations and associated faults were observed in specimens scratched on a (110) surface. Figure 9.32 is typical of the dislocation microstructures observed in these specimens and shows segments of dislocation loops bounding planar defects on (100). 

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