Photovoltaic Results Obtained with LPE Silicon Layers

1 Photovoltaic Results Obtained with LPE Silicon Layers 

These high-performances on single crystal substrates have been confirmed on multicrystalline Si substrates. ANU fabricated a cell of 15.4% efficiency and Voc of 639 mV on a lightly doped substrate and a cell of 15.2% efficiency and Voc of 639 mV on a heavily doped substrate (with no texturing in either case, 

To compensate the extra cost of the epitaxial growth of the Si thin film, one has to use a low-cost Si substrate like metallurgical grade Si (MG-Si). University of Konstanz [27] developed LPE on upgraded MG-Si (UMG-Si). An efficiency of 10% without surface texturation (Calculated potential n = 14%) was achieved. Thin layer of 30 pm thick was grown from In melt with 0.1 Wt% Ga at 990° C. The saturation of the melt was obtained with the meltback of the UMG-Si wafer It is not necessary to add electronic grade Si to the solution. 

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