Photoresists compositions activated

A new family of perfluoroacrylate and methacrylate based positive and negative tone photoresist compositions activated at 193 run has been prepared by free radical homo-or co-polymerization of acrylate or methacrylate derivatives. Polymeric agents prepared in this manner had Mn s between 5,000 and 50,000 daltons and were readily soluble in organic solvents. 

Optically active polymerizable isosorbide derivatives, (II) and ( ), were prepared by Koyama et al. (3) and used in photoresist compositions. 

Interest in solution inhibition resist systems is not limited to photoresist technology. Systems that are sensitive to electron-beam irradiation have also been of active interest. While conventional positive photoresists may be used for e-beam applications (31,32), they exhibit poor sensitivity and alternatives are desirable. Bowden, et al, at AT T Bell Laboratories, developed a novel, novolac-poly(2-methyl-l-pentene sulfone) (PMPS) composite resist, NPR (Figure 9) (33,34). PMPS, which acts as a dissolution inhibitor for the novolac resin, undergoes spontaneous depolymerization upon irradiation (35). Subsequent vaporization facilitates aqueous base removal of the exposed regions. Resist systems based on this chemistry have also been reported by other workers (36,37). 

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